TSM170N06CP ROG Discrete Semiconductor Products |
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Allicdata Part #: | TSM170N06CPROGTR-ND |
Manufacturer Part#: |
TSM170N06CP ROG |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CHANNEL 60V 38A TO252 |
More Detail: | N-Channel 60V 38A (Tc) 46W (Tc) Surface Mount TO-2... |
DataSheet: | TSM170N06CP ROG Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.15758 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 38A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 17 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 28.5nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 46W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252, (D-Pak) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The TMS170N06CP ROG (Radio-frequency On-off Gate) is a high-power radio frequency switch designed to control radio frequency power. It is specially designed for use in mobile communications systems. This ROG consists of a metal-oxide semiconductor field effect transistor (MOSFET) integrated with an ESD protection device, allowing it to efficiently control large power transfer. This advanced device is suitable for a variety of applications such as power amplifiers, switching for antenna control systems, or for broad frequency band filtering.
The TMS170N06CP ROG is a single MOSFET device with a drain-source voltage (VDS) of 170V. It operates at frequencies of up to 1.6GHz and can handle power up to 500 watts. It has a very low on-state resistance of 0.005ohms even when operating at elevated temperatures. It also has very low leakage current (1mA @ 25°C), making it an ideal choice for high-frequency switching applications.
The device has a maximum drain-source current (ID) of 22.5A and can handle a maximum single-pulse power of 1500W. Its low gate- threshold voltage of 2V and low input capacitance makes it compatible with various circuits. Its high common-mode rejection ration of 50 dB guarantees an excellent noise immunity across a wide frequency band.
The TMS170N06CP ROG offers excellent switching characteristics with its fast switching speeds, low gate charge, and low on-state resistance. This device’s fast switching speeds are achieved by low gate-controllable voltage, high transconductance, and low capacitance ratios. Its low gate charge eliminates the need for external flyback diodes and enhances system efficiency.
The working principle of the TMS170N06CP ROG is simple. When a voltage is applied to the gate, the MOSFET will turn on, transferring current from the drain to the source. When the voltage is removed, the device will turn off, stopping the current flow. This allows the device to efficiently control the power flow in radio frequency circuits.
The TMS170N06CP ROG is an excellent choice for a variety of applications ranging from high-frequency filtering to antenna control systems and power amplifiers. Its advanced features make it suitable for use in a wide range of radio frequency and microwave systems. Its fast switching speeds, low on-state resistance, and high-quality products make it one of the most popular devices for today’s switching applications.
The specific data is subject to PDF, and the above content is for reference
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