Allicdata Part #: | TSM10NC65CFC0G-ND |
Manufacturer Part#: |
TSM10NC65CF C0G |
Price: | $ 0.96 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CH 650V 10A ITO220S |
More Detail: | N-Channel 650V 10A (Tc) 45W (Tc) Through Hole ITO-... |
DataSheet: | TSM10NC65CF C0G Datasheet/PDF |
Quantity: | 926 |
1 +: | $ 0.86940 |
10 +: | $ 0.77238 |
100 +: | $ 0.61060 |
500 +: | $ 0.47353 |
1000 +: | $ 0.37384 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 900 mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1650pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 45W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | ITO-220S |
Package / Case: | TO-220-3 Full Pack |
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The TSM10NC65CF C0G is a type of transistor, more specifically a power Metal Oxide Semiconductor Field Effect Transistor or "MOSFET" for short. MOSFETs are a type of transistor designed to rapidly switch high-power circuits in modern electronic devices, allowing them to switch currents of up to 10 A with a low on-resistance of only 0.06 Ω. The TSM10NC65CF C0G is a popular choice for use in a variety of applications due to its low-loss operation and fast switching speed.
The primary purpose of MOSFETs is to act as a switch, typically in order to control current in a power circuit. The TSM10NC65CF C0G is no exception, and it is often used in low and high power applications, where the design requires a higher level of reliability and performance. This MOSFET is also used in power-regulated circuits, motor control applications, solar panel systems, and battery-powered devices.
The TSM10NC65CF C0G features an N-channel MOSFET construction as opposed to a P-channel, allowing it to offer improved performance and efficiency. The N-channel construction also reduces power consumption in the circuit, allowing for more efficient operation. The device also has an integrated bypass diode that helps reduce power consumption further. Other features include two separate source pads, one for the gate and one for the drain, as well as integrated shielding to provide better insulation and reduce noise.
To understand how the TSM10NC65CF C0G works, it\'s important to first understand Gate Threshold Voltage, or GTV. GTV is the voltage applied to the gate in order to turn it on or off, depending on whether a positive or negative voltage is applied. The TSM10NC65CF C0G operates at a gate threshold voltage of 3.3V, meaning that it can switch high-power circuits quickly and reliably from 3.3V and up. The 8A current limit on some versions of the C0G can provide additional protection from over-current and help extend the life of the device.
In addition to its fast switching ability, the TSM10NC65CF C0G also has salient features for use in a variety of applications. Due to its low on-resistance, the C0G can achieve high switching speeds and allows for greater efficiency in circuits requiring low-loss operation. Its integrated bypass diode helps to reduce noise and heat, which allows for better performance and energy efficiency. The C0G also has an integrated shield that helps to protect its components from external interference.
The TSM10NC65CF C0G is a popular choice for a wide range of applications due to its low-loss operation and fast switching speed. Its N-channel MOSFET construction and integrated bypass diode improve its efficiency, while its integrated shield help provide greater protection from external interference. In addition, its low gate threshold voltage allows it to quickly and reliably switch high-current circuits at up to 8A. With these features, the C0G is an excellent choice for powering devices such as solar panels, motor control applications, and battery-powered devices.
The specific data is subject to PDF, and the above content is for reference
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