Allicdata Part #: | TSM120N06LCSRLGTR-ND |
Manufacturer Part#: |
TSM120N06LCS RLG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CHANNEL 60V 23A 8SOP |
More Detail: | N-Channel 60V 23A (Tc) 12.5W (Tc) Surface Mount 8-... |
DataSheet: | TSM120N06LCS RLG Datasheet/PDF |
Quantity: | 10000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 37nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2193pF @ 30V |
FET Feature: | -- |
Power Dissipation (Max): | 12.5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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The TSM120N06LCS RLG is a high-performance 60V N-channel power MOSFET. It is a type of transistor and is part of a growing family of field effect transistors, or FETs, that are found in many different areas of electronics, from consumer to industrial applications. This MOSFET device has a wide range of uses and is particularly useful for switching high current and high voltage, as it can handle up to 120A continuous drain current and has an impressive voltage rating of up to 60V. Additionally, this MOSFET features low gate charge of 3.1nC which means it will switch faster than conventional MOSFETs.
MOSFETs are made using very thin layers of insulator material, such as silicon or polysilicon, sandwiched between two layers of metal. The layers of metal form the gate contact and make up the FET. Current is allowed to flow when the gate voltage is applied, as electrons are pulled through the layers of insulator material. By varying the gate voltage, the resistance of the MOSFET can be adjusted, allowing it to act as an amplifier or a switch.
The TSM120N06LCS RLG MOSFET is designed specifically for switching a wide range of DC currents up to 120A. It uses a low gate charge of 3.1nC and is capable of switching high voltages, up to 60V with a maximum on-state resistance of 8.3mΩ. Its low switching losses make it an ideal choice for high current applications, where high efficiency is important.
This type of MOSFET is commonly found in automotive applications, such as electric vehicle applications. It is used to switch the high power currents required to operate the motors in electric vehicles and to operate the lighting systems. It is also used in high-performance battery chargers, and in power converters, as well as in electronic controls and power management systems.
In addition to these applications, the TSM120N06LCS RLG MOSFET is often used in high current, high voltage switching circuits, such as high voltage DC-DC converters, and in power supplies. It is also used in power amplifiers and radio frequency (RF) amplifiers, to protect expensive components from high current, high voltage loads.
The TSM120N06LCS RLG MOSFET offers efficient operation and can handle high current and high voltage applications. Its low gate charge of 3.1nC makes it more efficient than conventional MOSFETs, and its high-performance makes it a reliable choice for many types of applications.
The specific data is subject to PDF, and the above content is for reference
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