TSM150P04LCS RLG Discrete Semiconductor Products |
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Allicdata Part #: | TSM150P04LCSRLGTR-ND |
Manufacturer Part#: |
TSM150P04LCS RLG |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET P-CHANNEL 40V 22A 8SOP |
More Detail: | P-Channel 40V 22A (Tc) 12.5W (Tc) Surface Mount 8-... |
DataSheet: | TSM150P04LCS RLG Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.15758 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2783pF @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | 12.5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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The TSM150P04LCS RLG is a type of high-performance single N-channel MOSFET (metal oxide semiconductor field-effect transistor). It is widely used in industrial and consumer electronic products, due to its high switching speed, low on-state resistance, and simple interface. The device is constructed from a single integrated circuit (IC), where an N-type polysilicon gate is connected to two MOSFETs to form a single device. The gate is protected by a Schottky diode, which is formed by anode and cathode, both of which are connected to the N-type polysilicon gate. This provides protection for the gate from overvoltages, when the gate-source voltage exceeds the breakdown voltage of the device.
The TSM150P04LCS RLG is mainly used for power applications, where switching speed is required to provide high levels of performance. It is also used in voltage-controlled applications, such as electro-optic sensing, where the amount of current is controlled by adjusting the gate voltage. In addition, since the device is fully integrated and relatively small, it is ideal for use in space-constrained applications.
In terms of its working principle, the device functions as a switch. The gate voltage corresponds to the voltage controlling the source-drain current, as an increase in gate voltage causes the source-drain current to increase. As the source-drain current decreases, the device is said to be in the off state. To turn the device on, the gate voltage must be raised. This increase in gate voltage reduces the source-drain resistance, thereby allowing a larger source-drain current to flow, and the device is said to be in the on state.
Another important feature of the TSM150P04LCS RLG is its low on-state resistance (< 60 mΩ), which allows for high-speed switching and improved efficiency in the application. The device is able to provide higher levels of performance when compared to other devices in its class, as it has a higher switching speed and a lower on-state resistance. Furthermore, the device utilizes an "enhancement" mode, which means that no external biasing is required in order to operate. This makes the device very simple to integrate into a circuit, as all that needs to be done is to connect the gate and source pins to the drive circuitry, and the device will automatically operate.
Overall, the TSM150P04LCS RLG is an excellent choice for high-performance, power applications, as it offers both high switching speed and low on-state resistance. Its ability to be easily integrated into a circuit and its "enhancement" mode of operation further makes it an attractive option. The device is well-suited to a variety of applications, including electro-optic sensing, where its low on-state resistance and high switching speed can be utilized to provide the desired level of performance.
The specific data is subject to PDF, and the above content is for reference
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