TSM900N10CH X0G Allicdata Electronics
Allicdata Part #:

TSM900N10CHX0G-ND

Manufacturer Part#:

TSM900N10CH X0G

Price: $ 0.55
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: MOSFET N-CH 100V 15A TO251
More Detail: N-Channel 100V 15A (Tc) 50W (Tc) Through Hole TO-2...
DataSheet: TSM900N10CH X0G datasheetTSM900N10CH X0G Datasheet/PDF
Quantity: 3706
1 +: $ 0.49770
10 +: $ 0.41706
100 +: $ 0.31298
500 +: $ 0.22952
1000 +: $ 0.17736
Stock 3706Can Ship Immediately
$ 0.55
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: TO-251 (IPAK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 90 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The TSM900N10CH X0G is a 600V, 10A N-Channel MOSFET manufactured by Transistor Solutions Inc. For use in High Frequency and High Voltage applications, this device boasts superior performance across a wide range of parameters. In this article, we\'ll take a look at the device\'s application field and working principle.

Application Field

The TSM900N10CH X0G is suitable for use in a wide range of applications, most notably in inverters, motor control, and power management. The device is well-suited to high-frequency switching due to its low gate charge, fast switch times, and low on-state resistance. The N-channel MOSFET also features a high breakdown voltage, making it suitable for use in high voltage applications such as servers and switchgear.

Working Principle

The TSM900N10CH X0G is a normally-off N-channel MOSFET, meaning it blocks current flow until a positive gate voltage is applied. When this positive gate voltage is applied, current can flow from the drain to the source. This is due to the MOSFET\'s semiconductor structure, which consists of a metal oxide layer sandwiched between two n-type layers. Since the metal oxide layer is an insulator, current will not flow until a positive charge is applied to the metal oxide layer (the gate). This causes the metal oxide layer to become conductive, allowing current to flow.

The TSM900N10CH X0G is also highly reliable, due to its design. The device features a self-protection system, which limits the drain-source voltage if the temperature of the device rises above a certain threshold. This self-protection system ensures the device is not damaged by excessive current, ensuring the device remains in good working order and can continue to be used.

Conclusion

In conclusion, the TSM900N10CH X0G is an ideal choice for use in high frequency and high voltage applications, due to its superior performance across a wide range of parameters. The device is well-suited to tasks such as inverters, motor control, and power management, and is reliable due to its self-protection system, which ensures the device remains in good working order. As such, the TSM900N10CH X0G is an excellent choice for anyone looking for a reliable, high-performance MOSFET.

The specific data is subject to PDF, and the above content is for reference

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