Allicdata Part #: | TSM900N10CHX0G-ND |
Manufacturer Part#: |
TSM900N10CH X0G |
Price: | $ 0.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CH 100V 15A TO251 |
More Detail: | N-Channel 100V 15A (Tc) 50W (Tc) Through Hole TO-2... |
DataSheet: | TSM900N10CH X0G Datasheet/PDF |
Quantity: | 3706 |
1 +: | $ 0.49770 |
10 +: | $ 0.41706 |
100 +: | $ 0.31298 |
500 +: | $ 0.22952 |
1000 +: | $ 0.17736 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | TO-251 (IPAK) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1480pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 9.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TSM900N10CH X0G is a 600V, 10A N-Channel MOSFET manufactured by Transistor Solutions Inc. For use in High Frequency and High Voltage applications, this device boasts superior performance across a wide range of parameters. In this article, we\'ll take a look at the device\'s application field and working principle.
Application Field
The TSM900N10CH X0G is suitable for use in a wide range of applications, most notably in inverters, motor control, and power management. The device is well-suited to high-frequency switching due to its low gate charge, fast switch times, and low on-state resistance. The N-channel MOSFET also features a high breakdown voltage, making it suitable for use in high voltage applications such as servers and switchgear.
Working Principle
The TSM900N10CH X0G is a normally-off N-channel MOSFET, meaning it blocks current flow until a positive gate voltage is applied. When this positive gate voltage is applied, current can flow from the drain to the source. This is due to the MOSFET\'s semiconductor structure, which consists of a metal oxide layer sandwiched between two n-type layers. Since the metal oxide layer is an insulator, current will not flow until a positive charge is applied to the metal oxide layer (the gate). This causes the metal oxide layer to become conductive, allowing current to flow.
The TSM900N10CH X0G is also highly reliable, due to its design. The device features a self-protection system, which limits the drain-source voltage if the temperature of the device rises above a certain threshold. This self-protection system ensures the device is not damaged by excessive current, ensuring the device remains in good working order and can continue to be used.
Conclusion
In conclusion, the TSM900N10CH X0G is an ideal choice for use in high frequency and high voltage applications, due to its superior performance across a wide range of parameters. The device is well-suited to tasks such as inverters, motor control, and power management, and is reliable due to its self-protection system, which ensures the device remains in good working order. As such, the TSM900N10CH X0G is an excellent choice for anyone looking for a reliable, high-performance MOSFET.
The specific data is subject to PDF, and the above content is for reference
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