| Allicdata Part #: | TSM9N90ECIC0G-ND |
| Manufacturer Part#: |
TSM9N90ECI C0G |
| Price: | $ 2.32 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | MOSFET N-CHANNEL 900V 9A ITO220 |
| More Detail: | N-Channel 900V 9A (Tc) 89W (Tc) Through Hole ITO-2... |
| DataSheet: |  TSM9N90ECI C0G Datasheet/PDF |
| Quantity: | 980 |
| 1 +: | $ 2.11050 |
| 10 +: | $ 1.88370 |
| 100 +: | $ 1.54463 |
| 500 +: | $ 1.25077 |
| 1000 +: | $ 1.05487 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 Full Pack, Isolated Tab |
| Supplier Device Package: | ITO-220 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 89W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2470pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 4.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
| Drain to Source Voltage (Vdss): | 900V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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The TSM9N90ECI C0G is one of the most widely used transistors in the market today. It is an insulated gate bipolar transistor (IGBT) that is capable of high-current, high-frequency switching operations. It is best suited for use in applications that require high-power switching such as electric power supplies and motor drives. This article will discuss the application fields and working principle of the TSM9N90ECI C0G.
Applications
The TSM9N90ECI C0G is a great choice for high-power switching applications due to its high current and high frequency operation. It is most commonly used in motor drives and electric power supplies. Motors of all sizes, from small DC motors to large AC motors, can be switched using this IGBT. Additionally, this transistor is often used in various power converter applications as it can handle high-power switching in a reliable and efficient manner.Working Principle
The TSM9N90ECI C0G is a type of insulated gate bipolar transistor (IGBT) and works on the principle of insulated gate voltage control. This means that it relies on a voltage applied to the gate in order to control the current flow in the device. The gate voltage is typically between 0V to 12V and is controlled according to the needs of the application.The IGBT is a three-terminal device and consists of an emitter terminal, a collector terminal, and a gate terminal. When a voltage is applied to the gate, it causes electrons to be pulled away from the substrate, creating an \'insulated gate\'. This allows the collector current to flow through the transistor and, depending on the level of voltage, will determine the amount of current passing through the device. The power efficiency of the IGBT is very high which makes it a great choice for power converters and motor drives. Additionally, its high switching frequency capability gives it an edge in speed-controlled applications. Furthermore, it has very low saturation voltage, which means that it can handle large amounts of power without affecting its efficiency.Conclusion
The TSM9N90ECI C0G is an IGBT that is widely used for high-power switching applications. It is best suited for motor drives and power converters due to its high switching frequency, low saturation voltage, and high power efficiency. It can be controlled by applying a voltage to the gate terminal and can provide reliable, efficient switching operation.The specific data is subject to PDF, and the above content is for reference
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