UP0411MG0L Allicdata Electronics

UP0411MG0L Discrete Semiconductor Products

Allicdata Part #:

UP0411MG0LTR-ND

Manufacturer Part#:

UP0411MG0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS DUAL PNP SSMINI5
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: UP0411MG0L datasheetUP0411MG0L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SSMini5-F3
Description

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The UP0411MG0L application field and working principles are important to understand for anyone who is interested in transistors in general. The UP0411MG0L is a pre-biased array of bipolar junction transistors (BJT) which has a low on-resistance of 1.5Ω and a low input bias current of 10 μA. This device is ideal for applications that require low on-resistance and low input bias current, such as power supply regulation, voltage level detection, switching, and more.

To understand how the UP0411MG0L works, it is necessary to understand the basics of how a bipolar junction transistor (BJT) works. Bipolar junction transistors are three-terminal devices composed of two PN junctions, one between the collector and the base and one between the base and the emitter. The small pieces of semiconductor material between the junctions are called base layers, and it is through these that current flows when a voltage is applied across the base-emitter junction. The current flow from the base to the collector is controlled by the current flow from the base to the emitter, which is determined by the base-emitter voltage.

The UP0411MG0L utilizes six identical NPN transistors that are pre-biased to a certain amount, which means that each transistor has already been set to a certain operating point. This allows the device to have a very low on-resistance and a low input bias current, which makes it ideal for applications such as power supply regulation, voltage level detection, and switching. Additionally, the UP0411MG0L has an integrated current mirror which allows it to have a very high current gain, which makes it well suited for applications requiring high current gains.

The UP0411MG0L also features an internal overload protection circuit, which helps to protect the device from current overloads or temporary shut-downs. Additionally, the pre-biased array contains a temperature compensation circuit and a built-in transistor leak detector, which allow it to remain stable in high temperature and/or extreme operating conditions. Finally, the device utilizes very low power and has low dissipation so it can operate in a wide temperature range without any risk of damaging the device.

The UP0411MG0L application field and working principles are essential for anyone who is looking to use this device in their projects. By understanding the basics of how a bipolar junction transistor works, and by understanding the features and benefits of the UP0411MG0L, anyone can successfully and safely utilize this device in their projects. The UP0411MG0L is an excellent and reliable device for any transistor array project, and by understanding its application field and working principles, you can use this device with confidence.

The specific data is subject to PDF, and the above content is for reference

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