US1M-13-F Discrete Semiconductor Products |
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Allicdata Part #: | US1M-FDITR-ND |
Manufacturer Part#: |
US1M-13-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 1KV 1A SMA |
More Detail: | Diode Standard 1000V 1A Surface Mount SMA |
DataSheet: | US1M-13-F Datasheet/PDF |
Quantity: | 20000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | SMA |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | US1M |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes, such as the US1M-13-F, are electronic components that allow electric current to flow in one direction but block current in the opposite direction. Diodes are used in rectifying circuits in order to convert alternating current (AC) to direct current (DC). The US1M-13-F is a single diode designed for rectifier applications.
It is made from silicon, has a maximum rated peak repetitive reverse voltage of 1 kV and a maximum average forward current of 1 A. The diode also has a maximum forward voltage of around 1.3 volts, and a time-to-turn-on of around 50ns.
The US1M-13-F has a variety of uses and can be used in both commercial and industrial applications. It is often used in power supplies, chargers and adapters, as well as in solar applications to convert an AC voltage to a DC voltage. It can also be used in motor control circuits, electric vehicle charging systems and automotive electronics.
The working principle of a single diode is based on the idea that electric current will always flow from the anode (positive terminal) to the cathode (negative terminal). When there is an alternating current, the diode will conduct current from the anode to the cathode during the positive cycle and block current from flowing in the opposite direction during the negative cycle. This allows for the conversion of AC to DC as the current is only able to flow in one direction.
In the US1M-13-F, the diode is encased in a hermetically sealed metal case and has an interior silicone grease which helps to provide superior thermal contact between the silicon pellet and case for increased reliability. The package also features a metal screw cap for easy installation.
The US1M-13-F is a versatile and reliable single diode rectifier that can be used in a range of applications. It can be used to provide a high level of protection in power supplies, chargers and adapters, as well as in motor control circuits and electric vehicles. Additionally, it can be used to control the flow of electric current, ensuring that current only flows in one direction and helping to convert AC to DC.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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US1M R3G | Taiwan Semic... | -- | 12600 | DIODE GEN PURP 1KV 1A DO2... |
US1M-TP | Micro Commer... | -- | 55 | DIODE GEN PURP 1KV 1A DO2... |
US1MDFQ-13 | Diodes Incor... | -- | 10000 | DIODE GEN PURP 1KV 1A DFL... |
US1MFL-TP | Micro Commer... | 0.04 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MDF-13 | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A DFL... |
US1ME-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 1KV 1A SMA... |
US1ML-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-E3/5AT | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-13-F | Diodes Incor... | -- | 20000 | DIODE GEN PURP 1KV 1A SMA... |
US1M-E3/61T | Vishay Semic... | -- | 48600 | DIODE GEN PURP 1KV 1A DO2... |
US1M M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1MHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1MHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1M-M3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3_A/H | Vishay Semic... | -- | 1800 | DIODE GEN PURP 1KV 1A DO2... |
US1MFA | ON Semicondu... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A SOD... |
US1MHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 1KV 1A SMA... |
US1M/1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
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