Allicdata Part #: | US1M-E3/5ATGITR-ND |
Manufacturer Part#: |
US1M-E3/5AT |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1KV 1A DO214AC |
More Detail: | Diode Standard 1000V 1A Surface Mount DO-214AC (SM... |
DataSheet: | US1M-E3/5AT Datasheet/PDF |
Quantity: | 1000 |
7500 +: | $ 0.06151 |
15000 +: | $ 0.05608 |
37500 +: | $ 0.05247 |
52500 +: | $ 0.04825 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 10µA @ 1000V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | US1M |
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Diodes are devices which are used for controlling the flow of electrons and for rectifying alternating current to direct current. The US1M-E3/5AT is a type of single diode with a wide range of applications and a variety of operating principles.
The US1M-E3/5AT is a three-layer silicon-based diode and is an ultrasensitive breaker which is mounted onto a standing base. This detector is designed for quick disconnect and connection of the current circuit and hence, offers excellent switching performance and low losses at low voltage. As it is a low voltage detector, the US1M-E3/5AT is commonly used for switching and protection of portable electronic devices and other sensitive equipment.
When considering the application field of the US1M-E3/5AT, it is primarily used in switching and protection of portable electronic devices and other low voltage equipment. It is also used in power regulators and optical instruments, where its switching and protection functions improve performance and stability. Additionally, the US1M-E3/5AT can be used as an on/off switch in control systems where switches are used to cut off energy supply in the event of a failure.
The working principle of the US1M-E3/5AT is based on resistance. When a voltage is applied, the device draws power from the circuit and the base current creates a current flow by creating a potential difference between the two sides of the device. The device then changes the resistance of the circuit in response to changes in the applied voltage and current, allowing for on/off control. In this way, it can switch circuit conditions and protect the circuit from damage when the voltage or current exceeds safe levels.
In addition to switching and protection applications, the US1M-E3/5AT can also be used for motor control in DC motors. It can be used to iteratively control the speed of the motor by controlling the current supplied to it. When the current reaches the maximum safe level, the device will switch off the current and protect the motor from damage. In this way, the device can be used to control the speed and operation of the motor in a very efficient manner.
The US1M-E3/5AT is a versatile and lightweight diode which can be used in a wide array of applications to enhance performance and safety. With its simple operating principle and robust protection features, the device is one of the most widely used diodes for switching and protection applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
US1M R3G | Taiwan Semic... | -- | 12600 | DIODE GEN PURP 1KV 1A DO2... |
US1M-TP | Micro Commer... | -- | 55 | DIODE GEN PURP 1KV 1A DO2... |
US1MDFQ-13 | Diodes Incor... | -- | 10000 | DIODE GEN PURP 1KV 1A DFL... |
US1MFL-TP | Micro Commer... | 0.04 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MDF-13 | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A DFL... |
US1ME-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 1KV 1A SMA... |
US1ML-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-E3/5AT | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-13-F | Diodes Incor... | -- | 20000 | DIODE GEN PURP 1KV 1A SMA... |
US1M-E3/61T | Vishay Semic... | -- | 48600 | DIODE GEN PURP 1KV 1A DO2... |
US1M M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1MHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1MHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1M-M3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3_A/H | Vishay Semic... | -- | 1800 | DIODE GEN PURP 1KV 1A DO2... |
US1MFA | ON Semicondu... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A SOD... |
US1MHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 1KV 1A SMA... |
US1M/1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
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