Allicdata Part #: | US1MHR3G-ND |
Manufacturer Part#: |
US1MHR3G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 1A DO214AC |
More Detail: | Diode Standard 1A Surface Mount DO-214AC (SMA) |
DataSheet: | US1MHR3G Datasheet/PDF |
Quantity: | 1000 |
7200 +: | $ 0.05108 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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US1MHR3G is a high power rectifier diode with a narrow outline package. It is widely used in a variety of applications such as high frequency switching power supplies, switched mode power supplies, motor control and snubber circuits, industrial equipment, and lighting.
The US1MHR3G is designed and built based on advanced process and technologies. It utilizes a state-of-the-art, low profile, thick-film-metalized TO-220F/TO-220FP housing that provides superior performance and heat transfer properties. The device is composed of two semiconductor anode layers that are carefully aligned to ensure maximum current conduction in both directions.
The working principle of US1MHR3G is simple and effective. It consists of two p-type and one n-type layers, with a charge multiplier region in between. The p-type layer allows electrons to flow in one direction and prevent electron flow in the opposite direction, while the n-type layer allows electrons to flow in the opposite direction and prevent electron flow in the other direction. A reverse voltage is applied to the device and a defined current will flow through the diode in the direction of the applied reverse voltage.
The US1MHR3G is optimized for use in applications requiring high-power, high-temperature operation. It offers low forward voltage drop, low reverse tunneling current, high forward surge capability, and excellent reverse breakdown voltage. The US1MHR3G is also capable of withstanding voltage surges up to 8kV, ensuring that it can safely handle high power switching applications.
The US1MHR3G is an ideal solution for a wide range of applications requiring high power switching. It is a cost-effective, reliable and durable solution for a variety of applications. Its narrow outline housing provides excellent thermal dissipation and efficient heat transfer, making it suitable for use in a variety of applications. Its high surge capability and reverse breakdown voltage make it an ideal choice for applications requiring high power switching. Its low-reverse tunneling current and low forward voltage drop help to maximize efficiency in applications such as high-frequency switching power supplies, motor control and snubber circuits.
In conclusion, the US1MHR3G is a high-powered rectifier diode with a narrow outline package. It is designed to be used in a variety of applications requiring high-power, high-temperature operation. It offers low forward voltage drop, low reverse tunneling current, and excellent reverse breakdown voltage. The US1MHR3G is an ideal solution for a wide range of applications requiring high power switching.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
US1M R3G | Taiwan Semic... | -- | 12600 | DIODE GEN PURP 1KV 1A DO2... |
US1M-TP | Micro Commer... | -- | 55 | DIODE GEN PURP 1KV 1A DO2... |
US1MDFQ-13 | Diodes Incor... | -- | 10000 | DIODE GEN PURP 1KV 1A DFL... |
US1MFL-TP | Micro Commer... | 0.04 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MDF-13 | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A DFL... |
US1ME-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 1KV 1A SMA... |
US1ML-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-E3/5AT | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-13-F | Diodes Incor... | -- | 20000 | DIODE GEN PURP 1KV 1A SMA... |
US1M-E3/61T | Vishay Semic... | -- | 48600 | DIODE GEN PURP 1KV 1A DO2... |
US1M M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1MHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1MHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1M-M3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3_A/H | Vishay Semic... | -- | 1800 | DIODE GEN PURP 1KV 1A DO2... |
US1MFA | ON Semicondu... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A SOD... |
US1MHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 1KV 1A SMA... |
US1M/1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
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