US1MHE3_A/H Discrete Semiconductor Products |
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Allicdata Part #: | US1MHE3_A/HGITR-ND |
Manufacturer Part#: |
US1MHE3_A/H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1KV 1A DO214AC |
More Detail: | Diode Standard 1000V 1A Surface Mount DO-214AC (SM... |
DataSheet: | US1MHE3_A/H Datasheet/PDF |
Quantity: | 1800 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 10µA @ 1000V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | US1M |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The US1MHE3_A/H diode is commonly categorized as a rectifier due to its ability to rectify signals for use in a variety of applications. In particular, the US1MHE3_A/H is one of the most popular single diodes for high-voltage applications. As a result, this diode has been widely used in various application fields, such as power supplies, rectification, and load switching.
A diode is a two-terminal semiconductor device that does not allow the flow of current in one direction but does allow the flow of current in the other direction. This makes them ideal for use in rectification, which is the process of converting alternating current (AC) to direct current (DC). The US1MHE3_A/H is a single diode, meaning it only has one diode connected to its two terminals – an anode and a cathode.
The US1MHE3_A/H diode has the ability to withstand high voltages in the range of 200 to 800 volts, with a reverse voltage of 0.3V and a peak forward surge current of 12.5A. As a result, it is an excellent choice for applications such as power supplies and load switches, where the voltage needs to be controlled accurately in order to get efficient results. The diode also has a low forward voltage drop that increases efficiency as well as cost savings.
The US1MHE3_A/H diode works by taking the alternating current and converting it into direct current. This is done by allowing current flow in only one direction. When the voltage is in the polarities of the anode and the cathode, the current flows. When the voltage reverses, the current does not flow. This is known as the rectification process.
Another important application of US1MHE3_A/H diodes is in the protection of equipment. When an overload or surge occurs, the diode will shut off the current and prevent the overload from causing any damage to the equipment. This makes the diode an important part of any application where the system is prone to surges and overloads.
In conclusion, the US1MHE3_A/H is a single diode primarily used for high-voltage applications such as power supplies, rectification, and load switching. It is designed to offer excellent protection against overloads and surges, and allows the current to flow in only one direction, making it an ideal choice for applications where efficiency and cost savings are essential.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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US1M R3G | Taiwan Semic... | -- | 12600 | DIODE GEN PURP 1KV 1A DO2... |
US1M-TP | Micro Commer... | -- | 55 | DIODE GEN PURP 1KV 1A DO2... |
US1MDFQ-13 | Diodes Incor... | -- | 10000 | DIODE GEN PURP 1KV 1A DFL... |
US1MFL-TP | Micro Commer... | 0.04 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MDF-13 | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A DFL... |
US1ME-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 1KV 1A SMA... |
US1ML-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-E3/5AT | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-13-F | Diodes Incor... | -- | 20000 | DIODE GEN PURP 1KV 1A SMA... |
US1M-E3/61T | Vishay Semic... | -- | 48600 | DIODE GEN PURP 1KV 1A DO2... |
US1M M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1MHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1MHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1M-M3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3_A/H | Vishay Semic... | -- | 1800 | DIODE GEN PURP 1KV 1A DO2... |
US1MFA | ON Semicondu... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A SOD... |
US1MHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 1KV 1A SMA... |
US1M/1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
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