US1M-E3/61T Discrete Semiconductor Products |
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| Allicdata Part #: | US1M-E3/61TGITR-ND |
| Manufacturer Part#: |
US1M-E3/61T |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 1KV 1A DO214ACDiode Standard 1000V ... |
| More Detail: | N/A |
| DataSheet: |  US1M-E3/61T Datasheet/PDF |
| Quantity: | 48600 |
| Series: | US1x |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Type: | Fast Recovery Rectifiers |
| Voltage - DC Reverse (Vr) (Max): | 1000V |
| Unidirectional Channels: | -- |
| Current - Average Rectified (Io): | 1A |
| Voltage - Reverse Standoff (Typ): | -- |
| Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
| Voltage - Breakdown (Min): | -- |
| Speed: | Fast Recovery = 200mA (Io) |
| Voltage - Clamping (Max) @ Ipp: | -- |
| Reverse Recovery Time (trr): | 75ns |
| Current - Peak Pulse (10/1000µs): | -- |
| Current - Reverse Leakage @ Vr: | 10µA @ 1000V |
| Power - Peak Pulse: | -- |
| Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
| Power Line Protection: | -- |
| Mounting Type: | Surface Mount |
| Applications: | -- |
| Package / Case: | DO-214AC, SMA |
| Capacitance @ Frequency: | -- |
| Supplier Device Package: | DO-214AC (SMA) |
| Operating Temperature: | -55°C ~ 150°C |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Base Part Number: | US1M |
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1. FEATURES
1. Low profile package
2. Ideal for automated placement
3. Glass passivated pallet chip junction
4. Ultrafast reverse recovery time
5. Low switching losses, high efficiency
6. High forward surge capability
7. Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
8. AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
2. PRIMARY CHARACTERISTICS
3. APPLICATIONS
For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive, and telecommunication.
4. ELECTRICAL CHARACTERISTICS
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| US1M R3G | Taiwan Semic... | -- | 12600 | DIODE GEN PURP 1KV 1A DO2... |
| US1M-TP | Micro Commer... | -- | 55 | DIODE GEN PURP 1KV 1A DO2... |
| US1MDFQ-13 | Diodes Incor... | -- | 10000 | DIODE GEN PURP 1KV 1A DFL... |
| US1MFL-TP | Micro Commer... | 0.04 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
| US1MDF-13 | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A DFL... |
| US1ME-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 1KV 1A SMA... |
| US1ML-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
| US1M-E3/5AT | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
| US1M-13-F | Diodes Incor... | -- | 20000 | DIODE GEN PURP 1KV 1A SMA... |
| US1M-E3/61T | Vishay Semic... | -- | 48600 | DIODE GEN PURP 1KV 1A DO2... |
| US1M M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
| US1MHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
| US1MHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
| US1M-M3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
| US1M-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
| US1MHE3_A/H | Vishay Semic... | -- | 1800 | DIODE GEN PURP 1KV 1A DO2... |
| US1MFA | ON Semicondu... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A SOD... |
| US1MHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
| US1MHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
| US1MHE3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
| US1M-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 1KV 1A SMA... |
| US1M/1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
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