US1MDFQ-13 Discrete Semiconductor Products |
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Allicdata Part #: | US1MDFQ-13DITR-ND |
Manufacturer Part#: |
US1MDFQ-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 1KV 1A DFLAT |
More Detail: | Diode Standard 1000V 1A Surface Mount D-Flat |
DataSheet: | US1MDFQ-13 Datasheet/PDF |
Quantity: | 10000 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, Flat Lead |
Supplier Device Package: | D-Flat |
Operating Temperature - Junction: | -55°C ~ 150°C |
Description
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Introduction
The US1MDFQ-13 is a single surface mount rectifier diode featured with low forward voltage drop, and high surge current capability. The device is available in hermetic ceramic and power SMD flat-leads packages for easy reflow fabrication and mounting.The US1MDFQ-13 is the ideal solution for power management in many different types of applications. It can be used as a diode in buck converters and reverse polarity protection in automotive and industrial applications. In addition, its low forward voltage drop makes it a great choice for many power rectification and power conditioning applications.Applications
The US1MDFQ-13 can be used in a variety of applications, including:- Buck converters
- Power boosters for car and motorbikes
- High current charging and discharging systems
- Reverse polarity protection
- DC/DC Converter circuits
Features and Benefits
The US1MDFQ-13 features several advantages that make it ideal for use in a variety of applications, including:- High surge current capability
- Low forward voltage drop
- High efficiency
- High reliability in hermetic ceramic and power SMD flat-leads packages
- Low thermal resistance
- Low reverse leakage current
- High surge current capability
- Easy reflow fabrication and mounting
Working Principle
The US1MDFQ-13 works by allowing a single direction of current flow. As the voltage on the negative side of the diode rises, the current is allowed to flow from the anode to the cathode. The device has a rectifier bridge that is formed by two PN+ layers. The rectifier bridge will slow down the current through the device when it reaches the PN+ layer of the diode, thus providing a path for the current to flow.Conclusion
In conclusion, the US1MDFQ-13 is a great choice for power management in many different types of applications. Its low forward voltage drop and high surge current capability make it a reliable and efficient choice for power rectification and power conditioning applications. With its hermetic ceramic and power SMD flat-leads packages, the US1MDFQ-13 is an environmentally friendly and easy to mount device.The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "US1M" Included word is 22
Part Number | Manufacturer | Price | Quantity | Description |
---|
US1M R3G | Taiwan Semic... | -- | 12600 | DIODE GEN PURP 1KV 1A DO2... |
US1M-TP | Micro Commer... | -- | 55 | DIODE GEN PURP 1KV 1A DO2... |
US1MDFQ-13 | Diodes Incor... | -- | 10000 | DIODE GEN PURP 1KV 1A DFL... |
US1MFL-TP | Micro Commer... | 0.04 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MDF-13 | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A DFL... |
US1ME-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 1KV 1A SMA... |
US1ML-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-E3/5AT | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-13-F | Diodes Incor... | -- | 20000 | DIODE GEN PURP 1KV 1A SMA... |
US1M-E3/61T | Vishay Semic... | -- | 48600 | DIODE GEN PURP 1KV 1A DO2... |
US1M M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1MHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1MHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1M-M3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3_A/H | Vishay Semic... | -- | 1800 | DIODE GEN PURP 1KV 1A DO2... |
US1MFA | ON Semicondu... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A SOD... |
US1MHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 1KV 1A SMA... |
US1M/1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
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