Allicdata Part #: | US1M-M3/61TGITR-ND |
Manufacturer Part#: |
US1M-M3/61T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1KV 1A DO214AC |
More Detail: | Diode Standard 1000V 1A Surface Mount DO-214AC (SM... |
DataSheet: | US1M-M3/61T Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 10µA @ 1000V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes, also known as rectifiers, are semiconductor devices that are used to control the flow of electricity in electrical circuits. Diodes come in many shapes and sizes, but the most commonly used type is the single diode. The US1M-M3/61T is a single diode with a variety of applications.
The US1M-M3/61T is a Schottky barrier diode, which is a type of diode that typically has a higher forward voltage drop than other types of diodes. This makes the US1M-M3/61T ideal for applications where low power loss is required. It is typically used in switching circuits, power supplies, and rectification processes.
The US1M-M3/61T has a forward voltage drop of 0.2V and a reverse voltage of 60V. It can handle a maximum current of 1A and has a maximum power dissipation of 1W. The US1M-M3/61T is available in a standard TO-220 package and is compliant with RoHS standards.
The working principle of the US1M-M3/61T is based on the fact that it is a rectifier diode. A rectifier diode is a two-terminal semiconductor device that can conduct current in one direction only. If the anode of the US1M-M3/61T is connected to the positive terminal of a DC power supply and the cathode is connected to the negative terminal, then current will flow through the diode only in the forward direction. This type of diode is known as an anode or forward biased diode.
When the US1M-M3/61T is in the reverse biased state, the potential difference between the anode and the cathode is greater than the reverse breakdown voltage. This prevents the flow of current in the reverse direction and the diode remains in a non-conductive state.
The US1M-M3/61T has numerous applications in different industries. It is commonly used for switching power supplies, DC/DC converters, and as a rectifier diode for various different applications. It is also used for signal conditioning, pulse shaping, and as a clamping diode.
The US1M-M3/61T is a reliable, cost-effective, and efficient diode that has become an integral part of many industrial applications worldwide. Its high forward voltage drop, low power loss, and wide operating temperature range make it ideal for a variety of applications. It can also be used in circuit designs that require reverse-bias protection, or in applications where high surge currents occur.
The specific data is subject to PDF, and the above content is for reference
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US1MDF-13 | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A DFL... |
US1ME-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 1KV 1A SMA... |
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US1MHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1M-M3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
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US1MHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
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