US1ME-TP Discrete Semiconductor Products |
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Allicdata Part #: | US1ME-TPMSTR-ND |
Manufacturer Part#: |
US1ME-TP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE GEN PURP 1KV 1A SMAE |
More Detail: | Diode Standard 1000V 1A Surface Mount SMAE |
DataSheet: | US1ME-TP Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 10µA @ 1000V |
Capacitance @ Vr, F: | 17pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | SMAE |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | US1M |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
US1ME-TP is a single-phase bridge type rectifier that features a 1000 volt isolation rating, ultra low forward voltage, and an excellent thermal performance. This rectifier is ideal for a wide range of industrial and consumer electronic applications, from lighting and consumer electronics to automotive. With a variety of package sizes and configurations, it can be custom-designed for a wide range of applications requiring higher forward voltage capability and higher power dissipation.
A single-phase bridge type rectifier is an electrical circuit component made up of four diodes arranged in a bridge circuit configuration. These diodes allow current to flow in one direction only, converting alternating current (AC) to direct current (DC). The US1ME-TP rectifier features a low forward voltage, increasing efficiency, as well as excellent thermal performance, which reduces heat buildup and therefore, also increases efficiency.
The working principle of the US1ME-TP rectifier is simple, but effective. The four diodes are connected together with a common junction, forming what is known as a “bridge circuit”. When AC voltage is applied, the polarity of one side of the bridge changes, causing current to flow in one direction. The forward voltage drop of the US1ME-TP rectifier is low, resulting in a lower power dissipation and greater efficiency.
The US1ME-TP rectifier offers a number of advantages, including a high frequency operation, a low forward voltage and high efficiency. Furthermore, its unique package design makes it suitable for a variety of applications, including LED lighting, industrial equipment, power supplies, and other consumer electronics. The US1ME-TP rectifier is also inherently capable of carrying high currents and is available in a large range of various configurations, making it suitable for a wide range of applications.
In conclusion, the US1ME-TP rectifier is the perfect choice for a wide range of industrial and consumer electronic applications. It offers excellent forward voltage drop and thermal performance, a high frequency operation, and a wide range of package sizes and configurations, making it ideal for a number of different applications. By utilizing the US1ME-TP rectifier, developers can create efficient, reliable, and robust products for a variety of industries.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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US1M R3G | Taiwan Semic... | -- | 12600 | DIODE GEN PURP 1KV 1A DO2... |
US1M-TP | Micro Commer... | -- | 55 | DIODE GEN PURP 1KV 1A DO2... |
US1MDFQ-13 | Diodes Incor... | -- | 10000 | DIODE GEN PURP 1KV 1A DFL... |
US1MFL-TP | Micro Commer... | 0.04 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MDF-13 | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A DFL... |
US1ME-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 1KV 1A SMA... |
US1ML-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-E3/5AT | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-13-F | Diodes Incor... | -- | 20000 | DIODE GEN PURP 1KV 1A SMA... |
US1M-E3/61T | Vishay Semic... | -- | 48600 | DIODE GEN PURP 1KV 1A DO2... |
US1M M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1MHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1MHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1M-M3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3_A/H | Vishay Semic... | -- | 1800 | DIODE GEN PURP 1KV 1A DO2... |
US1MFA | ON Semicondu... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A SOD... |
US1MHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 1KV 1A SMA... |
US1M/1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
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