US1MHE3/61T Discrete Semiconductor Products |
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Allicdata Part #: | US1MHE3/61TGITR-ND |
Manufacturer Part#: |
US1MHE3/61T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1KV 1A DO214AC |
More Detail: | Diode Standard 1000V 1A Surface Mount DO-214AC (SM... |
DataSheet: | US1MHE3/61T Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 10µA @ 1000V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | US1M |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
When it comes to power conversion, the single phase diode bridge rectifier module is an important device. The US1MHE3/61T is a single phase diode bridge rectifier module which can greatly simplify the system architecture of the power supply, making it more efficient and reliable. This bridge contains 6 diodes and is rated up to a maximum of 61A/1000VAC. It is suitable for a wide range of applications including power conversion and circuit protection.
The US1MHE3/61T module is built around a series of rectifier diodes. Diodes are an important element in power conversion. When an alternating current is applied to the module, the diodes will allow current to flow in one direction through the module. This converts the alternating current into direct current. The output current is proportional to the applied voltage.
The diode bridge module also provides protection. This is done in two ways: the diodes act like valves, allowing current to flow in one direction while blocking current from flowing in the other direction, and the diodes also act like fuses, allowing excessive current to be blown away without damaging the device itself.
The US1MHE3/61T can operate at temperatures up to 175 degrees celsius. Furthermore, it is UL recognized for safety, and has been designed for low thermal resistance. This makes it an ideal choice for use in high-temperature applications.
The US1MHE3/61T can be used in a wide variety of applications, including motor control, power conversion, power supply, LED light and circuit protection. It is also suitable for use in solar and photovoltaic energy applications. In addition, it can be used in power electronics, medical instrumentation and automotive electronics.
Overall, the US1MHE3/61T is an efficient and reliable module which can greatly simplify the system architecture of a power supply, making it more efficient and reliable. Its innovative design ensures robust performance and superior reliability with maximum efficiency. With its wide range of applications, the US1MHE3/61T can be used in a variety of applications which require reliable power conversion and circuit protection.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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US1M R3G | Taiwan Semic... | -- | 12600 | DIODE GEN PURP 1KV 1A DO2... |
US1M-TP | Micro Commer... | -- | 55 | DIODE GEN PURP 1KV 1A DO2... |
US1MDFQ-13 | Diodes Incor... | -- | 10000 | DIODE GEN PURP 1KV 1A DFL... |
US1MFL-TP | Micro Commer... | 0.04 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MDF-13 | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A DFL... |
US1ME-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 1KV 1A SMA... |
US1ML-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-E3/5AT | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-13-F | Diodes Incor... | -- | 20000 | DIODE GEN PURP 1KV 1A SMA... |
US1M-E3/61T | Vishay Semic... | -- | 48600 | DIODE GEN PURP 1KV 1A DO2... |
US1M M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1MHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1MHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1M-M3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3_A/H | Vishay Semic... | -- | 1800 | DIODE GEN PURP 1KV 1A DO2... |
US1MFA | ON Semicondu... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A SOD... |
US1MHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 1KV 1A SMA... |
US1M/1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
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