US1MDF-13 Discrete Semiconductor Products |
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Allicdata Part #: | US1MDF-13DITR-ND |
Manufacturer Part#: |
US1MDF-13 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 1KV 1A DFLAT |
More Detail: | Diode Standard 1000V 1A Surface Mount D-Flat |
DataSheet: | US1MDF-13 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.06632 |
30000 +: | $ 0.06083 |
50000 +: | $ 0.05855 |
Series: | D-FLAT |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, Flat Lead |
Supplier Device Package: | D-Flat |
Operating Temperature - Junction: | -55°C ~ 150°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The US1MDF-13 is a single rectifier diode designed for applications that require high reverse pulse capability and low forward voltage drop. The device is offered in a molded case with insulated leads. It is designed to withstand multiple peak forward current surge pulses up to 5 Amps, providing increased performance and reliability.
This diode is used in applications such as AC-DC power converters, voltage regulators, motor speed controllers and motor protections for which continuous high current rectification is necessary.
US1MDF-13 is an axial-leaded rectifier diode that utilises a planar technology with a tight parameter distribution and low power dissipation. It achieves high performance through its low capacitance, high surge capability and low threshold voltage characterisation. This diode is intended for operation up to 100V, with a forward voltage drop of 1.0 V and a reverse current of 0.5 µA. It has a high peak power rating of 4W.
The US1MDF-13 utilises a high temperature technology and a high-performance bonding wire, empowering it to withstand high surge current pulses and temperatures up to 175°C. It has been designed to complies with the requirements of the RoHS standard.
The US1MDF-13 is designed to optimise thermal performance and reduce system cost. It helps reduce the power loss compared to other devices with the same voltage ratings, with a low reverse leakage current for quiet operation and low power consumption, making it suitable for high power applications.
The working principle of the US1MDF-13 diode is simple. A diode is a passive two-terminal electronic component that enables current to pass in only one direction. It consists of two elements, anode and cathode, which provide the two electrical connections and can be easily identified by the symbol imprinted on either side of the device.
When the anode is connected to the positive pole and the cathode is connected to the negative pole, the current flows through the device and the voltage across it increases. When the anode is connected to the negative pole and the cathode is connected to the positive pole, no current can pass through and the voltage remains constant.
The US1MDF-13 is designed to have a low forward resistance when forward biased, allowing current to pass through with less voltage loss compared to other rectifiers. It also features a high reverse voltage rating, allowing it to handle reverse voltage surges up to 5 Amps.
The US1MDF-13 exhibits extremely low power dissipation and improved reverse leakage performance. Its wide operating temperature range from – 40°C to +175°C provides the user with greater flexibility and longer life in the field.
The US1MDF-13 is widely used in robust AC to DC power conversion and voltage regulation, motor speed control, motor protection and other high current rectification applications. It offers high surge capability, low forward resistance, low reverse current and its design makes it very reliable in operation.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
US1M R3G | Taiwan Semic... | -- | 12600 | DIODE GEN PURP 1KV 1A DO2... |
US1M-TP | Micro Commer... | -- | 55 | DIODE GEN PURP 1KV 1A DO2... |
US1MDFQ-13 | Diodes Incor... | -- | 10000 | DIODE GEN PURP 1KV 1A DFL... |
US1MFL-TP | Micro Commer... | 0.04 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MDF-13 | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A DFL... |
US1ME-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 1KV 1A SMA... |
US1ML-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-E3/5AT | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-13-F | Diodes Incor... | -- | 20000 | DIODE GEN PURP 1KV 1A SMA... |
US1M-E3/61T | Vishay Semic... | -- | 48600 | DIODE GEN PURP 1KV 1A DO2... |
US1M M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1MHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1MHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1M-M3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3_A/H | Vishay Semic... | -- | 1800 | DIODE GEN PURP 1KV 1A DO2... |
US1MFA | ON Semicondu... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A SOD... |
US1MHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 1KV 1A SMA... |
US1M/1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
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