US1M R3G Discrete Semiconductor Products |
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Allicdata Part #: | US1MR3GTR-ND |
Manufacturer Part#: |
US1M R3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 1KV 1A DO214AC |
More Detail: | Diode Standard 1000V 1A Surface Mount DO-214AC (SM... |
DataSheet: | US1M R3G Datasheet/PDF |
Quantity: | 12600 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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US1M R3G devices are diodes designed for high reverse voltage surge applications. Specifically, they are designed to handle high-reverse voltage surges up to 1000V. They are part of the Single Rectification diodes family, used to convert alternating current (AC) voltage to direct current (DC) voltage.
The US1M-R3G devices are available in a wide range of voltage ratings, up to 1000V in surge mode and minimum rated breakdown voltage up to 800V. The US1M-R3G series includes 8 types of devices between US1M-R3G-E3 and US1M-R3G-K3.
The US1M-R3G devices have a construction that facilitates its use in applications such as measuring and controlling electric current, electric charging, adapting to different voltages, and protecting circuits from overvoltage.
US1M-R3G devices’ most notable feature is that they allow a higher reverse voltage than other similar devices. They are especially designed with high-power applications in mind and can handle up to 1000V in reverse voltage surge.
US1M-R3G devices also have the capacity to quickly respond to changes in circuit current load. The capacitance of the device ensures that the input voltage remains stable, providing sufficient power while keeping the current within acceptable limits.
One of the main characteristics of US1M-R3G devices is its extremely low leakage current. They also have a low forward voltage drop, which allows for more efficient power transfer and energy consumption.
The US1M-R3G device is an ideal choice for a wide variety of applications, from power supplies to surge-protection applications. Its construction allows it to easily adapt to various power-circuit conditions, and its high voltage rating makes it suitable for heavy industrial applications.
In short, the US1M-R3G is a single rectification diode solution for applications requiring a high reverse voltage pulse. With its high voltage rating and low forward voltage drop, the US1M-R3G device is one of the most effective and reliable in its class.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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US1M R3G | Taiwan Semic... | -- | 12600 | DIODE GEN PURP 1KV 1A DO2... |
US1M-TP | Micro Commer... | -- | 55 | DIODE GEN PURP 1KV 1A DO2... |
US1MDFQ-13 | Diodes Incor... | -- | 10000 | DIODE GEN PURP 1KV 1A DFL... |
US1MFL-TP | Micro Commer... | 0.04 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MDF-13 | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A DFL... |
US1ME-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 1KV 1A SMA... |
US1ML-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-E3/5AT | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-13-F | Diodes Incor... | -- | 20000 | DIODE GEN PURP 1KV 1A SMA... |
US1M-E3/61T | Vishay Semic... | -- | 48600 | DIODE GEN PURP 1KV 1A DO2... |
US1M M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1MHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1MHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1M-M3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3_A/H | Vishay Semic... | -- | 1800 | DIODE GEN PURP 1KV 1A DO2... |
US1MFA | ON Semicondu... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A SOD... |
US1MHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 1KV 1A SMA... |
US1M/1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
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