US1M-13 Discrete Semiconductor Products |
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Allicdata Part #: | US1MDITR-ND |
Manufacturer Part#: |
US1M-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 1KV 1A SMA |
More Detail: | Diode Standard 1000V 1A Surface Mount SMA |
DataSheet: | US1M-13 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | SMA |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | US1M |
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The US1M-13 is a single type rectifier diode. It is not a general-purpose diode, but it is commonly used in various applications—including power supplies, welding, and industrial systems. The US1M-13 is designed to provide high-reliability junction rectification. It is a silicon-based diode that can handle up to 1.3 amps of forward current.
The US1M-13 is comprised of two terminals: an anode and a cathode. The anode is the positive terminal, while the cathode is the negative terminal. When the anode is connected to a positive voltage, the diode will become forward biased and electricity will start to flow through the diode. When the anode is connected to a negative voltage, the diode will become reverse biased and no electrical current will flow through the diode. This is known as junction rectification.
The US1M-13 can handle up to 1,300 volts of reverse voltage. It has a maximum forward voltage of 1.3 volts and a maximum forward current of 1.3 amps. It is also able to withstand a surge current of up to 10 amperes for 10 milliseconds. The device also has a low junction-capacitance, allowing for fast switching speeds.
The US1M-13 is commonly used in various applications that require junction rectification. It is ideal for applications that need both high-reliability and high-frequency performance. For instance, it can be used in power supplies, welding, and other industrial systems. It is also used in switching applications, as it has low junction-capacitance and allows for fast switching speeds.
The US1M-13 works by using a p–n junction, which allows the device to be forward biased or reverse biased in order to control the flow of electricity. When the junction is forward-biased, the diode is likely to conduct current and current will flow through it. When the junction is reverse-biased, the current will not flow through the diode, thus providing junction rectification.
In conclusion, the US1M-13 is a single type rectifier diode. It is designed for applications that require high-reliability and high-frequency performance. It has a maximum forward voltage of 1.3 volts and a maximum forward current rating of 1.3 amps. It is also able to withstand a surge current of up to 10 amperes for 10 milliseconds. It is commonly used in power supplies, welding, and other industrial systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
US1M R3G | Taiwan Semic... | -- | 12600 | DIODE GEN PURP 1KV 1A DO2... |
US1M-TP | Micro Commer... | -- | 55 | DIODE GEN PURP 1KV 1A DO2... |
US1MDFQ-13 | Diodes Incor... | -- | 10000 | DIODE GEN PURP 1KV 1A DFL... |
US1MFL-TP | Micro Commer... | 0.04 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MDF-13 | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A DFL... |
US1ME-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 1KV 1A SMA... |
US1ML-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-E3/5AT | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-13-F | Diodes Incor... | -- | 20000 | DIODE GEN PURP 1KV 1A SMA... |
US1M-E3/61T | Vishay Semic... | -- | 48600 | DIODE GEN PURP 1KV 1A DO2... |
US1M M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1MHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1MHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1A DO214AC... |
US1M-M3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3_A/H | Vishay Semic... | -- | 1800 | DIODE GEN PURP 1KV 1A DO2... |
US1MFA | ON Semicondu... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A SOD... |
US1MHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1MHE3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
US1M-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 1KV 1A SMA... |
US1M/1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
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