ZXMP6A16DN8TA Allicdata Electronics

ZXMP6A16DN8TA Discrete Semiconductor Products

Allicdata Part #:

ZXMP6A16DN8TR-ND

Manufacturer Part#:

ZXMP6A16DN8TA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2P-CH 60V 2.9A 8-SOIC
More Detail: Mosfet Array 2 P-Channel (Dual) 60V 2.9A 1.81W Sur...
DataSheet: ZXMP6A16DN8TA datasheetZXMP6A16DN8TA Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V
Power - Max: 1.81W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Description

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The ZXMP6A16DN8TA is a transistor that belongs to a family of field-effect transistors (FETs). In this particular type, the ZXMP6A16DN8TA is a MOSFET array. It is a type of multichannel MOSFET with multiple gates on a single silicon chip.

MOSFETs, or metal-oxide semiconductor field-effect transistors, are active elements with three different segments: a source, drain, and gate. The two sides of the FET are the source and drain, and the extra terminal is the gate. A field-effect transistor is typically a solid-state semiconductor device that has three or more terminals, with one of them being the control gate, while the other ones are the source and drain. MOSFETs are transistors that use metal-oxide-semiconductor (MOS) technology, in which electrons move through a metal oxide layer between the source and the drain. By having a third terminal (the gate), it is possible to control the current between the source and the drain.

The ZXMP6A16DN8TA is a single-chip as well as multi-gate MOSFET with eight low-capacitance N-channel MOSFETs. It is designed for use in high-speed digital systems like consumer electronic devices and electronics such as DVD players and game consoles. This device is ideal for high-frequency switching and is designed to minimize on-resistance and lockout voltage ratings. It can operate up to 20Gbps with a 4V supply.

The ZXMP6A16DN8TA is especially suitable for high-performance switch and transmission line applications. It has been designed to provide low power loss, low input capacitance, low turn-on resistance, wide voltage range and high switching speeds. This makes it an ideal choice for high-speed, high-frequency switching and transmission lines. Moreover, the device comes in a small form factor, making it easy to install and highly flexible.

Another important aspect of the ZXMP6A16DN8TA is its working principle. This type of MOSFET uses the principle of the channel-length modulation. This means that the channel-length is modulated in order to achieve the desired output. The channel-length modulation is done by controlling the voltage at the gate. This allows the device to operate up to a certain frequency. As the applied electric field increases, the channel-length also increases, which increases the current and subsequently the switching speed.

The ZXMP6A16DN8TA is an excellent choice for applications that require high speed switching and high performance transistors. It has a wide voltage range and a low power loss and a high speed switching capability. It is suitable for use in high-speed digital systems that require signal switching, signal amplifying and power control. Additionally, its low input capacitance, wide voltage range and high switching speeds make it ideal for high-speed and high-frequency switching applications.

The specific data is subject to PDF, and the above content is for reference

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