Allicdata Part #: | ZXMP3F37N8TADI-ND |
Manufacturer Part#: |
ZXMP3F37N8TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 30V 6.4A 8SOP |
More Detail: | P-Channel 30V 6.4A (Ta) 1.56W (Ta) Surface Mount 8... |
DataSheet: | ZXMP3F37N8TA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 6.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 7.1A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 31.6nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1678pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 1.56W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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The ZXMP3F37N8TA is a single N-Channel Enhancement Mode Field Effect Transistor (FET) designed to maximize the advantages of silicon MOSFET technology over conventional bipolar transistors. It can be used as a switch or amplifier, depending on its application. Here, we explore the device’s application field and its working principle in some detail.
Application Field Of ZXMP3F37N8TA
The ZXMP3F37N8TA is commonly found in many applications, from simple to complex. It can be used in consumer electronics and industrial systems as switching applications, providing a low power, low voltage interface with various logic circuits. It can also be used as an amplifier in RF transmitters and receivers. Its high switching speed allows for faster transmission of data and signals in telecommunication, radar system and other applications alike. Additionally, due to its extremely low “on” resistance, it is often incorporated into power supply circuits, acting as a switch between the power source and the load. Furthermore, it can also be used in motor control, audio and video applications with excellent power efficiency.
Working Principle of ZXMP3F37N8TA
The ZXMP3F37N8TA is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is composed of two parts: the source and the drain. A voltage is applied between the source and the drain, which creates an electric field. This electric field attracts electrons through the gate, creating a current flowing from source to drain. The amount of current is determined by the voltage applied to the gate. The higher the voltage, the more current is allowed to flow. Since the drain-source resistance is very low, it can be used in many applications, such as switching, power amplification, and power conversion.
The ZXMP3F37N8TA is usually used as a switch because it can control the flow of power. When the voltage applied to the gate is low, the switch is “off” and no current can flow. When the voltage applied to the gate is high, the switch is “on” and current can flow. This makes the ZXMP3F37N8TA a very useful component for power control in multiple applications.
In summary, the ZXMP3F37N8TA is an enhancement mode silicon MOSFET single device that can be used for many application fields, from simple to complex. Its working principle is based on the electric field created between the source and drain and the voltage applied to the gate. This makes it a useful switch for controlling power, as well as for amplifying radio frequency applications.
The specific data is subject to PDF, and the above content is for reference
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