ZXMP6A18KTC Discrete Semiconductor Products

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The ZXMP6A18KTC device is a logic level MOSFET that is suitable for high current and high voltage applications.  Its package comprises of a P-channel MOSFET in an Lowther KTC package.  Its unique feature is that the Compact Lowther KTC package is capable of fitting into tight spaces. 

Application Fields

The ZXMP6A18KTC MOSFET is used in a variety of applications, including consumer electronics, industrial systems, automotive, medical and complementary power applications.  Some specific applications include DC/DC converters, HV power supplies, switching regulators, motor controls, battery chargers, lighting circuits, load switches, and load drivers. 

Working Principle

The ZXMP6A18KTC is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) where the field effect is created by an inversion layer of charge carriers (electrons or holes), typically located at the surface of an insulated gate electrode.  This inversion layer works by modulating the conductivity of the device by controlling the amount of electric field between the source and the drain terminals. 

This MOSFET has an extremely low gate charge and its threshold voltage is low, allowing it to be used in a wide range of applications.  This device also has a low drain-source capacitance, so switching times are reduced with minimal power losses.  The combination of the low gate charge, low threshold voltage and low drain-source capacitance make it an ideal choice for switching applications. 

In terms of its features, the ZXMP6A18KTC has an on-resistance of less than 60 milliohms at 10V, an operating temperature range from -55°C to 175°C, an off leakage current of less than 2 microamps, and a maximum drain-source voltage of 18V.  The maximum current that it can handle is up to 16A when the pulse width is limited to less than 8µs with a duty cycle of 1:1. 

In conclusion, the ZXMP6A18KTC logic level MOSFET is suitable for high current and high voltage applications, and is typically used in consumer electronics, industrial systems, automotive, medical and complementary power applications.  This device has a low gate charge, low threshold voltage, low drain-source capacitance, low on-resistance and high current handling capability. 

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