ZXMP10A17E6QTA Allicdata Electronics

ZXMP10A17E6QTA Discrete Semiconductor Products

Allicdata Part #:

ZXMP10A17E6QTADITR-ND

Manufacturer Part#:

ZXMP10A17E6QTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET P-CH 100V 1.3A SOT23-6
More Detail: P-Channel 100V 1.3A (Ta) 1.1W (Ta) Surface Mount S...
DataSheet: ZXMP10A17E6QTA datasheetZXMP10A17E6QTA Datasheet/PDF
Quantity: 6000
Stock 6000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: SOT-23-6
Supplier Device Package: SOT-26
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 424pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 350 mOhm @ 1.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The ZXMP10A17E6QTA is a high voltage enhanced E-mode metal-oxide-semiconductor field-effect transistor (MOSFET) with low Gate-source threshold voltage, high drain-source breakdown voltage, and low on-state resistance. It is primarily used for switching power applications in a wide array of electronic systems, including but not limited to motor drivers, rectifiers, automotive inverters, and uninterruptible power supplies.

The ZXMP10A17E6QTA MOSFET is an E-mode MOSFET, meaning it is an enhancement-mode MOSFET, which means its "on" state requires an external electrical signal to turn it on. It has an E-mode source-to-drain structure plus additional features to protect it from voltage breakdowns, allowing it to operate in both high and low voltage applications. It is constructed using a silicon body with a deep diffused N-well, a metal-oxide semiconductor (MOS region), and a grounded source. Its low gate-source threshold voltage makes it ideal for switching low voltage applications.

The working principle of a MOSFET depends on its type. Since the ZXMP10A17E6QTA is an E-mode MOSFET, it is sensitive to voltage signals. When a voltage signal is applied to the gate terminal of the transistor, an electric field is created, which influences the current flow from the source to the drain terminal by controlling a whole region of the transistor where current can flow. This voltage-controlled region is known as the “channel”. The greater the voltage signal applied to the gate, the wider the channel and the larger the current flowing through it. As a result, the MOSFET can be used as an on-off switch, as the on-state can be controlled by varying the gate voltage.

The ZXMP10A17E6QTA is commonly used in switching power applications, where it is used to control the flow of power from a source to a load. This can be used to turn off and on components in a circuit, as well as for regulating the voltage and current flow across the load. It can be used for controlling motors, rectifying AC signals, preventing load surges, and protecting circuits from damaging voltages. Additionally, it can be used for automotive inverters and uninterruptible power supplies.

In conclusion, the ZXMP10A17E6QTA is a high voltage enhanced E-mode MOSFET which is well-suited for many different applications, including motor drivers, rectifiers, automotive inverters, and uninterruptible power supplies. Its low gate-source threshold voltage, high drain-source breakdown voltage, and low on-state resistance make it an ideal choice for applications that require switching power control. Furthermore, its E-mode source-to-drain structure makes it an effective switch for low voltage applications.

The specific data is subject to PDF, and the above content is for reference

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