ZXMP3F35N8TA

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A ZXMP3F35N8TA transistor is a monolithic, low voltage single-channel enhancement mode metal-oxide-semiconductor field-effect transistor (MOSFET). It is part of the ZXMP3F family of MOSFETs from CJR Semiconductor, designed for use in a wide range of applications, including power amplifiers, switching converters, step-down and inverting circuits, low-noise amplifiers, audio equipment, and motor control systems.

The ZXMP3F35N8TA is a dual N-Channel MOSFET with high drain-source breakdown voltage (300V), gate-source breakdown voltage (20V minimum), low RDS(on), high voltage switching performance, and good system characteristics. It has a charge density of 8A/mm2 and a threshold voltage of 4V.

The ZXMP3F35N8TA is used primarily in power converters as an FET driver as well as in switching-mode power supplies, UHF/VHF/FM broadcast, PA and TV systems, and other electronic circuits. It can be used in applications where the switching frequency is below 500 kHz and the gate-source voltage and temperature remain below the specified rating. Flame-retardant materials and temperature rise of the transistor are also specified.

The working principle of the ZXMP3F35N8TA consists of four main components: the gate, source, drain, and substrate. The source and drain terminals of the device are connected to a voltage source, Iin, and a load, respectively. Between the source and drain, there is a channel of silicon with a thickness known as the threshold voltage, Vth, which determines the width of the current-carrying channel. When a voltage applied at the gate is larger than Vth, current is allowed to flow from the source to the drain through the channel. By controlling the gate voltage, the transistor can be used to switch between a high-impedance state (ON) and a low-impedance state (OFF).

The ZXMP3F35N8TA can be used to drive high current applications up to 35A in a compact footprint. Its low drain to source on-resistance and low threshold voltage make it a powerful device for power regulation, functional signal conversion, and signal amplification applications. It can be used in switching converters for step-up and step-down circuits, inverters, audio equipment, and signal conditioning circuits. The on-state drain current of the device can be adjusted to the precise required levels using just a few external components, making it ideal for use in precision applications.

Overall, the ZXMP3F35N8TA is a powerful single-channel enhancement mode MOSFET, ideal for use in a wide range of applications. It boasts high drain-source breakdown voltage, gate-source breakdown voltage and low RDS(on). Highly efficient, reliable and cost-effective, the ZXMP3F35N8TA is the perfect choice for all your power applications.

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