ZXMP6A17E6QTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXMP6A17E6QTADITR-ND |
Manufacturer Part#: |
ZXMP6A17E6QTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 60V 3A SOT-23-6 |
More Detail: | P-Channel 60V 2.3A (Ta) 1.1W (Ta) Surface Mount SO... |
DataSheet: | ZXMP6A17E6QTA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 2.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 125 mOhm @ 2.3A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17.7nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 637pF @ 30V |
FET Feature: | -- |
Power Dissipation (Max): | 1.1W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-26 |
Package / Case: | SOT-23-6 |
Base Part Number: | ZXMP6A17 |
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The ZXMP6A17E6QTA is a single MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor) which can be used in various applications. This particular MOSFET is a N-channel enhancement mode device which is rated at 30V, with a breakdown voltage of 60V. The source-drain current is rated at 45A and the on resistance (RDSon) is just 17mΩ. Its maximum operating temperature is 175°C with thermal resistance of 4.2°C/W, making it suitable for many applications.
MOSFETs are used in numerous applications due to their ability to control the flow of electricity. The ZXMP6A17E6QTA can be used for power switching applications, such as for switching motors, driving high power LEDs, or as a means of controlling large amounts of power. It can also be used in power supply circuits or as part of an inverter, as well as in high-speed switching applications. It is also suitable for use in portable devices, as it is low powered and can be easily integrated into existing circuits.
The working principle of the ZXMP6A17E6QTA is based on the MOSFET principle. MOSFETs are used in applications to control the flow of electric current in an easy and efficient manner. The MOSFET consists of an insulated gate, a channel region between the gate and the source, and a drain terminal. It uses an electric field to control the flow of current between the source and the drain. It is an unidirectional device, which means it can only be used to control current in a single direction.
When the gate terminal is left open, it creates a strong electric field which prevents current from flowing. When a voltage is applied to the gate terminal, it changes the electric field and allows current to flow between the source and the drain. The amount of current that is allowed to flow is determined by the applied voltage and the transistor’s parameters.
The main advantage of using MOSFETs is their low power consumption, making them more suitable for battery powered devices. Additionally, they also provide excellent switching performance, making them ideal for high-speed switching applications.
The ZXMP6A17E6QTA is a great type of MOSFET and can be used in a variety of applications. Its low on-resistance and high-current capacity make it suitable for a wide range of applications, from low to high-powered ones. It is easy to integrate into existing circuits and its low power consumption is perfect for portable devices. It is ideal for power switching, inverter, high-speed switching, and powering high-power LEDs.
The specific data is subject to PDF, and the above content is for reference
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