ZXMP10A18GTA Discrete Semiconductor Products

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The ZXMP10A18GTA is a single n-channel Automotive MOSFET with a logic gate-controlled low gate charge. It is manufactured by Diodes Incorporated and is used in a variety of automotive electrical applications. The device provides a field-effect control of drain-source current and operates over a -55 °C to 150 °C temperature range.

The ZXMP10A18GTA MOSFET is designed to suit the needs of automotive applications, where low voltage and high current ability are key. It has a maximum drain-source voltage of 30 V and an on-state drain current of 10 A (0.1 V, 4.7 mOhm). The device features an ESD protection voltage of 1000 V, with a coil inductance of 0.5 nH. It has a very low gate charge of 0.04 nC, with a gate-source operating voltage of 10 V.

The ZXMP10A18GTA has a common source architecture and its voltage controlled capability makes it suitable for PWM inverter applications. It provides high power over a wide temperature range, making it suitable for inverter topologies such as AC link, DC/DC convertors, UPS systems, and DC motor drives. It is also used in solar inverters and encapsulated power modules.

The main working principle of the ZXMP10A18GTA is that of a MOSFET. In a MOSFET, the transistor acts like a switch and the voltage applied to the gate modulates the conductivity of the channel, controlling the flow of electrons. When the gate voltage of a MOSFET is increased, the channel between its source and drain is opened, allowing current to flow. If the gate voltage is then reduced, the channel is closed, stopping the current. This is how the ZXMP10A18GTA works in applications, regulating the flow of electrons and controlling the current passing through the circuit.

In conclusion, the ZXMP10A18GTA is a single n-channel Automotive MOSFET. It offers an excellent ESD protection voltage of 1000 V and an optimized low gate charge. The device is perfect for automotive applications, where it can be used for various inverter topologies such as AC link, DC/DC convertors, and UPS systems. Its main working principle is that of a MOSFET, using the gate voltage to open and close the channel between its source and drain.

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