ZXMP10A17GQTC Allicdata Electronics
Allicdata Part #:

ZXMP10A17GQTC-ND

Manufacturer Part#:

ZXMP10A17GQTC

Price: $ 0.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET PCH 100V 1.7A SOT223
More Detail: P-Channel 100V 1.7A (Ta) 2W (Ta) Surface Mount SOT...
DataSheet: ZXMP10A17GQTC datasheetZXMP10A17GQTC Datasheet/PDF
Quantity: 1000
4000 +: $ 0.30429
Stock 1000Can Ship Immediately
$ 0.34
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 424pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 10V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 450 mOhm @ 1.2A, 6V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The ZXMP10A17GQTC is an N-channel depletion type ultra-high-speed MOSFET which features low on-state resistance, low Coss and an ultra-fast switching response. As one of the fastest power MOSFETs available, the ZXMP10A17GQTC is best suited for high efficiency DC-DC converters and AC-DC active power factor correction systems.

This device is a discrete three-terminal device that has two gates and one source terminal. The two gates are the control gate and the drain gate. The source terminal is connected to the supply voltage, and the two gates are capable of independently controlling the drain current by controlling the voltage applied to them. This makes the ZXMP10A17GQTC an SRAM cell array compatible device, in which each memory cell can be independently switched on and off.

The typical applications of the ZXMP10A17GQTC include switching power supplies such as dc-dc converters and ac-dc active power factor correction (APFC) systems. It is also suitable for use in high-speed switching applications, where high-speed switching is required. The device is well suited for automotive applications, where good switching characteristics and low RF emission are required.

The working principle of the ZXMP10A17GQTC is based on capacitive coupling of the two gates. As the drain-gate voltage is increased, the capacitive coupling between the two gates increases, thus increasing the drain current. Conversely, decreasing the drain-gate voltage decreases the capacitive coupling, thus reducing the drain current. This allows the MOSFET to be accurately controlled, allowing it to be operated either in an open or closed state.

The ZXMP10A17GQTC features a low Qg (gate charge), which is important for high-efficiency switching power supplies. The low Qg also enables the device to operate in zero-voltage switching (ZVS) mode, which reduces switching losses, thereby increasing efficiency. Additionally, the device also features a low Coss (output capacitance), which is important for high-efficiency switching power supplies. This ensures that the device can rapidly switch from one state to the other without losing energy.

In conclusion, the ZXMP10A17GQTC is an N-channel depletion type ultra-high-speed MOSFET which offers an ultra-fast switching response and low on-state resistance and Coss. With its low Qg and Qgd parameters, it is best suited for high efficiency DC-DC converters and AC-DC active power factor correction (APFC) systems. Additionally, the device is suitable for use in high-speed switching applications, where high-speed switching is required, and automotive applications, where good switching characteristics and low RF emission are required.

The specific data is subject to PDF, and the above content is for reference

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