ZXMP10A17E6TA Allicdata Electronics

ZXMP10A17E6TA Discrete Semiconductor Products

Allicdata Part #:

ZXMP10A17E6TR-ND

Manufacturer Part#:

ZXMP10A17E6TA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET P-CH 100V 1.3A SOT23-6
More Detail: P-Channel 100V 1.3A (Ta) 1.1W (Ta) Surface Mount S...
DataSheet: ZXMP10A17E6TA datasheetZXMP10A17E6TA Datasheet/PDF
Quantity: 12000
Stock 12000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: SOT-23-6
Supplier Device Package: SOT-26
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 424pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 350 mOhm @ 1.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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ZXMP10A17E6TA is a N-type enhancement-mode lateral field-effect power transistor that is widely used in many applications. It is a part of the ZMD family of transistors and is available in TO-220, TO-252, and SO-8 packages. The ZXMP10A17E6TA has a multi-gate structure with a maximum drain current of 7A and a maximum drain-source voltage of 30V. It is equipped with a low on-state resistance (RDS(ON)) and a low gate charge for high switching performance. The device offers a high input impedance, fast switching speed, and can also be used in low noise applications.

The ZXMP10A17E6TA is primarily used in switch-mode power supplies, DC-DC converters, voltage regulators, and other power management applications. It is also suitable for controlling, rectifying, or amplifying current or voltage signals in low, medium, or high power applications.

The main working principle of the ZXMP10A17E6TA is based on the flow of current through an external circuit. It relies on the PN junction existing between the source and the drain terminals of the transistor, and the control of current by an electric field applied to the gate terminal. When a voltage is applied to the gate terminal, an electric field is created in a thin semiconductor layer between the source and the drain terminals. This field controls the current flow between the source and the drain terminals. As the gate-source voltage increases, more current will flow between the source and the drain. When the gate-source voltage reaches a certain level, the transistor will turn on, allowing current to flow through the device.

Since the ZXMP10A17E6TA is a lateral field-effect transistor, it relies on changes in the applied gate voltage to modify the drain-source current. This makes the device an ideal solution for applications requiring high current or voltage control and efficient switching. The device also comes equipped with an integrated protection diode for use in high voltage applications.

In summary, the ZXMP10A17E6TA is an N-type enhancement-mode lateral field-effect power transistor used in various applications such as switch-mode power supplies, DC-DC converters, voltage regulators, and more. It is capable of delivering fast switching speeds and low on-state resistance due to its multi-gate structure and efficient control of current flow by the applied gate voltage.

The specific data is subject to PDF, and the above content is for reference

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