ZXMP6A17GQTA Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	125 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	17.7nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	637pF @ 30V
FET Feature:	--
Power Dissipation (Max):	2W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-223
Package / Case:	TO-261-4, TO-261AA
Base Part Number:	ZXMP6A17

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The ZXMN6A17GQTA is a N channel enhancement mode Field Effect Transistor (FET) designed for power switching applications. It is part of the ZXMN6A series of FETs manufactured by Zetex Semiconductors. The part is designed to work over a wide voltage range of 6 to 20V while offering low on-resistance values and low gate charge.The ZXMN6A17GQTA is suited for use in a variety of power switching applications including load switching and driver circuits for medium to high power loads. It is well-suited for use in power tools, motor control, automotive and industrial applications.Working PrincipleThe ZXMN6A17GQTA is an N channel enhancement mode FET. This type of FET consists of a tub of silicon with two main regions – a source and a drain region. Between the source and drain regions is a channel of n type silicon which is connected to an insulated gate.When a positive voltage is applied to the gate of the FET, electrons are attracted to the gate and the channel region becomes conductive. This allows current to flow between the source and drain regions. The amount of current that is able to flow is determined by the voltage applied to the gate. The higher the voltage, the more current that can flow.The ZXMN6A17GQTA also has a low gate charge, which means that it takes less time for the FET to turn on or off. This is an advantage as it helps to reduce power consumption as well as improve system efficiency.The ZXMN6A17GQTA is also designed to be ESD and latch-up protected. It has an ESD protection diode between the source and gate and a diode between the drain and gate. These diodes help to protect the part from electrostatic discharge, an event that occurs when a voltage larger than the ESD protection voltage is applied to the part.ConclusionThe ZXMN6A17GQTA is a N channel enhancement mode FET designed for power switching applications. The wide voltage range of 6 to 20V combined with low on-resistance values and low gate charge make it suitable for use in a variety of power switching applications including load switching and driver circuits for medium to high power loads. It is well-suited for use in power tools, motor control and automotive and industrial applications. The FET also has ESD and latch-up protection and is protected from electrostatic discharge.

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