ZXMP3A13FTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXMP3A13FTR-ND |
Manufacturer Part#: |
ZXMP3A13FTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 30V 1.4A SOT23-3 |
More Detail: | P-Channel 30V 1.4A (Ta) 625mW (Ta) Surface Mount S... |
DataSheet: | ZXMP3A13FTA Datasheet/PDF |
Quantity: | 15000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 625mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 206pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 6.4nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 210 mOhm @ 1.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.4A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The ZXMP3A13FTA is a type of field-effect transistor (FET) that was developed specifically for high power switched-mode power supply (SMPS) applications. It features high-voltage, high-speed switching characteristics and has been designed to meet the demanding requirements of the latest high power designs.
The ZXMP3A13FTA is a single N-channel enhancement mode MOSFET that incorporates advanced trench cell technology to ensure reliable performance even at high switching frequencies. It is well-suited for both low and high power SMPS applications, as well as for a wide range of other switching applications. Its high switching performance and low on-resistance make it well-suited for high current applications.
The ZXMP3A13FTA is used extensively in switched-mode power supply (SMPS) applications, such as DC-DC converters, AC-DC converters and inverters. It can also be used in motor control, photovoltaic systems, automotive power supplies and industrial power supplies, among others. Its high speed and low on-resistance make it well-suited for high current applications.
The working principle behind the ZXMP3A13FTA is the same as any other field-effect transistor. It divides into two basic parts: the gate and the drain. The gate of the FET is given a voltage, which creates an electric field. This electric field is what controls the operation of the device.
When a non-conducting source is connected to the gate, the electric field created by the gate causes current to flow from the drain to the source. On the other hand, when a conducting source is connected to the gate the current flows from the source to the drain, creating an “on” state. This is known as enhancement mode operation.
In the case of the ZXMP3A13FTA, the device has been designed to provide extremely high-speed switching. This is achieved through the use of advanced trench cell technology, which provides high speed switching, and low on-resistance. The device also features a low reverse transfer capacitance, high peak pulse current, and guard ring protection.
The main advantages of the ZXMP3A13FTA include its low on-resistance, high-speed switching, high peak pulse current, and its ability to withstand high voltages. This makes it ideal for high power switched-mode power supply (SMPS) applications, as well as other high current applications. It is also compatible with many higher voltage and high speed components.
In conclusion, the ZXMP3A13FTA is a single N-channel enhancement mode MOSFET, which has been designed to meet the demanding requirements of the latest high power designs. It features high-voltage, high-speed switching characteristics, as well as high peak pulse current, low reverse transfer capacitance and guard ring protection. As such, it is well-suited for a wide range of switched-mode power supply (SMPS) applications, as well as motor control, photovoltaic systems, automotive power supplies, and industrial power supplies.
The specific data is subject to PDF, and the above content is for reference
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