ZXMP10A18K Discrete Semiconductor Products |
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Allicdata Part #: | ZXMP10A18KTR-ND |
Manufacturer Part#: |
ZXMP10A18K |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 100V 3.8A DPAK |
More Detail: | P-Channel 100V 3.8A (Ta) 2.17W (Ta) Surface Mount ... |
DataSheet: | ZXMP10A18K Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 3.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 2.8A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 26.9nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1055pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 2.17W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The ZXMP10A18K is a voltage-controlled field-effect transistor that belongs to the Single MOSFET category. This type of transistor is especially useful for applications that require high gate-drive current, low power dissipation and wide temperature ranges, such as switching amplifiers, radio frequency amplifiers, and high-frequency operation.
A standard MOSFET device consists of a source, gate and drain. When the gate voltage is applied, it induces a field in the channel, which controls the flow of electrons between the source and the drain. This field is referred to as the channel modulation effect and allows the device to act as a switch. The ZXMP10A18K is particularly suited for use in fields such as circuit switching and power control because of its high voltage rating, which allows it to be used in higher voltage applications than other types of MOSFETs.
The ZXMP10A18K also has an extremely low power dissipation so it is well-suited for use with integrated circuits, especially those used in digital signal processing. The device also has an extremely wide operating temperature range, allowing it to be used in a wide variety of applications. The device is capable of operating in temperatures up to 150°C.
The ZXMP10A18K is particularly well-suited for use in amplifiers, power control and RF applications. In amplifiers, it is used as a switch to control the current or voltage gain. The voltage gain of an amplifier is determined by the ratio of output to input voltage. A low-voltage MOSFET is not well suited for use in a high-voltage amplifier because it will cause the amplifier to lose its voltage gain. The ZXMP10A18K is designed to rectify this problem and provide a high voltage-gain in high voltage amplifiers.
In power control applications, the ZXMP10A18K is used as a switch to control the current or voltage used to operate a device. For example, the device could be used to control the voltage output of a DC-DC converter. The device is also useful for switching power to a load in high frequency signals. This allows it to be used in radios and other communication systems.
The ZXMP10A18K also has applications in RF applications, as it can be used to switch on and off RF signals. For example, the device is well suited for use in base stations in order to reduce interference or to increase the range of the base station. Additionally, the device can be used for filter and oscillator applications due to its high switching speed.
The ZXMP10A18K is easy to use and simple to integrate into existing designs. The device has a low gate-drive voltage of 4V and a low gate-drain capacitance, which makes it especially suitable for high frequency applications. Additionally, the device is highly reliable and is capable of operating under harsh conditions.
In conclusion, the ZXMP10A18K is a high performance field effect transistor that is especially well suited for use in amplifiers, power control and RF devices. It has a high voltage rating and can be used in high voltage applications. Furthermore, it has a low power dissipation and wide operating temperature range which allows it to be used in a variety of applications. The device has a low gate-drive voltage and is capable of operating at high temperatures and frequencies.
The specific data is subject to PDF, and the above content is for reference
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