ZXTN04120HKTC Discrete Semiconductor Products |
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Allicdata Part #: | ZXTN04120HKTCDITR-ND |
Manufacturer Part#: |
ZXTN04120HKTC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN DARL 120V 1.5A TO252 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 120V 1.5... |
DataSheet: | ZXTN04120HKTC Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 1mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 2000 @ 1A, 5V |
Power - Max: | 1.5W |
Frequency - Transition: | 150MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
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A ZXTN04120HKTC is a single Bipolar Junction Transistor (BJT), commonly used in many applications due to its unique characteristics. This transistor is specifically designed for applications from DC to 400MHz, and its high gain and linearity performance makes it ideal for use in amplifiers, oscillators, modulators and switch circuits. In this article, we will discuss the application field and working principle of the ZXTN04120HKTC.
Application Field
The ZXTN04120HKTC is a popular transistor suitable for a wide variety of applications. Due to its the relatively high gain of 60 dB, the ZXTN04120HKTC is commonly used in amplifier circuits. It is also commonly used in oscillator circuits, such as those found in radio receiver applications. The linear transfer characteristics of the ZXTN04120HKTC also make it an excellent choice for use in modulators, particularly for FM applications. Finally, the ZXTN04120HKTC is a popular choice for use in switch circuits, as it has great switching capability between the “on” and “off” state.
Working Principle
The ZXTN04120HKTC is a single Bipolar Junction Transistor (BJT). BJTs can be thought of as three-terminal devices, where two terminals supply the input current, and one terminal supplies the output current. In the ZXTN04120HKTC, the three terminals are commonly referred to as the emitter, base and collector. The base is responsible for controlling the emitter-collector current, where the emitter supplies the majority of the current and the collector receives the majority of the current. When a voltage is applied to the base terminal, a small current is allowed to flow from the collector to the emitter. This is referred to as forward biased, and results in the transistor turning “on” and supplying a current from the collector to the emitter (collector-emitter current).
The gain of the transistor is determined by the ratio of the collector-emitter current to the base current. For the ZXTN04120HKTC, the gain is relatively high, with a typical gain of 60 dB. The collector-emitter voltage is also an important parameter for voltage amplifications, and for the ZXTN04120HKTC is typically between 10V and 50V.
Finally, the ZXTN04120HKTC is designed to operate at frequencies of up to 400MHz. This makes it an excellent choice for high-frequency applications, where the transistor is capable of providing minimal distortion and low noise operation.
Conclusion
The ZXTN04120HKTC is a popular single Bipolar Junction Transistor (BJT) designed specifically for applications from DC to 400MHz. It is ideal for use in amplifier, oscillator, modulator and switch applications, due to its high gain and linear performance. It has a typical gain of 60 dB, a collector-emitter voltage of between 10-50V, and can operate at up to 400MHz. For these reasons, the ZXTN04120HKTC is a great choice for many applications requiring amplification and switching.
The specific data is subject to PDF, and the above content is for reference
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