ZXTN25100DGTA Allicdata Electronics

ZXTN25100DGTA Discrete Semiconductor Products

Allicdata Part #:

ZXTN25100DGTR-ND

Manufacturer Part#:

ZXTN25100DGTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 100V 3A SOT223
More Detail: Bipolar (BJT) Transistor NPN 100V 3A 175MHz 3W Sur...
DataSheet: ZXTN25100DGTA datasheetZXTN25100DGTA Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 600mA, 3A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Power - Max: 3W
Frequency - Transition: 175MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: ZXTN25100D
Description

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The ZXTN25100DGTA is a silicon NPN Transistor. It belongs to the Transistors - Bipolar (BJT) – Single category. The ZXTN25100DGTA is a current-gain-controlled transistor in which the current gain is mainly determined by the collector current. It is commonly used in various applications, including DC current switching in inverters, amplifiers, and choppers. It can also be used as a voltage amplifier in the feedback system.

The primary function of a transistor is to allow the current gain when connected in an electronic circuit. The Base-Emitter junction in the ZXTN25100DGTA is forward-biased and the base current is proportional to the collector current. When the current gain is increased, the current flowing through the collector increases, and the collector voltage decreases, resulting in a decrease in the collector-emitter voltage, which allows the transistor to control the current.

The ZXTN25100DGTA is capable of blocking a large amount of base current and is designed for use with a high voltage. It can handle up to 250V, making it suitable for use in applications such as power amplifiers. It is also designed for high-frequency applications and is capable of dissipating large power levels. The ZXTN25100DGTA has a maximum collector current of 20A and a maximum power dissipation of about 3W.

The ZXTN25100DGTA is a current-gain-controlled transistor, which means that the Collector Current is determined by the Base current. The Collector-Emitter voltage will be proportional to the base current, so the current gain of the transistor will be proportional to the base current. The base current will be proportional to the collector current, so the collector current can be controlled by adjusting the base current.

The ZXTN25100DGTA is commonly used in the construction of DC switching circuits. This is due to its good power-handling capability and its ability to block high voltages. It can be used as an amplifier, a chopper, or as a voltage regulator. The ZXTN25100DGTA is also widely used in the construction of audio amplifiers. Its high current-gain and high power-handling capabilities make it suitable for use in audio applications.

In conclusion, the ZXTN25100DGTA is a current-gain-controlled NPN Transistor. It has a high voltage withstand and good power-handling capability. It is widely used in DC switching applications, power amplifiers, and audio amplifiers. It is capable of controlling the collector current by adjusting the base current.

The specific data is subject to PDF, and the above content is for reference

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