ZXTN25100DGQTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXTN25100DGQTADITR-ND |
Manufacturer Part#: |
ZXTN25100DGQTA |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | IC PWR TRANSISTOR SOT223 |
More Detail: | Bipolar (BJT) Transistor NPN 100V 3A 175MHz 1.2W S... |
DataSheet: | ZXTN25100DGQTA Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.25988 |
2000 +: | $ 0.24255 |
5000 +: | $ 0.23042 |
10000 +: | $ 0.22176 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 600mA, 3A |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 10mA, 2V |
Power - Max: | 1.2W |
Frequency - Transition: | 175MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
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The ZXTN25100DGQTA is a single bipolar junction transistor (BJT) manufactured by Zetex, with a maximum current gain of 450. The component is designed for use in general-purpose audio amplifiers, low-noise pre-amplifiers, and small signal switching applications.
A bipolar junction transistor (BJT) is a semiconductor device consisting of three terminals that allow current flow from the base (input) to the collector (output). The base is usually at a lower voltage than the collector, with the input voltage determining the amount of current flow from the collector to the emitter (output). The current gain, also known as the gain factor or hfe, of a BJT is the ratio between the collector and emitter currents, and varies with voltage. ZXTN25100DGQTA’s 450 current gain is generally considered ideal for audio applications.
The ZXTN25100DGQTA is a PNP type, which means it can conduct current in the opposite direction to most other transistors; the base being negative and the emitter being positive. These components are particularly useful in high frequency amplifiers, as they can produce a higher frequency of oscillation than NPN transistors.
The ZXTN25100DGQTA is designed for general use and can be applied in a range of audio amplifiers and low-noise pre-amplifiers. Its low reverse bias voltage, 600mV at 150mA collector-emitter current, helps to minimize the noise generated by the component, making it ideal for small signal switching applications. In addition, its wide operating temperature range makes it suitable for use in many industrial, commercial, and consumer applications.
The ZXTN25100DGQTA provides a current gain of 450, with a typical voltage of 8V and a typical collector-emitter saturation voltage of 0.5V. Its high current gain makes it an ideal choice for use in audio applications, while its low voltage and saturation voltage make it suitable for use in low-noise pre-amplifiers and small signal switching applications.
The ZXTN25100DGQTA is a single bipolar junction transistor (BJT) designed for general-purpose audio amplifiers, low-noise pre-amplifiers, and small signal switching applications. It has a maximum current gain of 450, with a typical voltage of 8V and a typical collector-emitter saturation voltage of 0.5V. Its wide operating temperature range and low reverse bias voltage make it suitable for a range of industrial, commercial, and consumer applications.
In conclusion, the ZXTN25100DGQTA is an ideal choice for use in a range of audio amplifiers, low-noise pre-amplifiers, and small signal switching applications. Its high current gain, low saturation voltage, and wide operating temperature range make it suitable for a variety of applications. This single bipolar junction transistor (BJT) is a reliable and cost-effective solution for many general-purpose audio and switching applications.
The specific data is subject to PDF, and the above content is for reference
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