ZXTN07012EFFTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXTN07012EFFTR-ND |
Manufacturer Part#: |
ZXTN07012EFFTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 12V 4.5A SOT23F-3 |
More Detail: | Bipolar (BJT) Transistor NPN 12V 4.5A 220MHz 1.5W ... |
DataSheet: | ZXTN07012EFFTA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 4.5A |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Vce Saturation (Max) @ Ib, Ic: | 320mV @ 45mA, 4.5A |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 500 @ 100mA, 2V |
Power - Max: | 1.5W |
Frequency - Transition: | 220MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-3 Flat Leads |
Supplier Device Package: | SOT-23F |
Base Part Number: | ZXTN07012E |
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The ZXTN07012EFFTA is a single-bipolar junction transistor (BJT), commonly used in electrical and electronics applications. It has a compact SOT-23 package, which allows it to be used in applications with limited space. The ZXTN07012EFFTA is typically used as a power switch, amplifier, or driver.
The bipolar transistor consists of three terminals, the base, the collector, and the emitter. The base-emitter voltage, VBE, gives the transistor an on-state voltage, the emitter-collector voltage, VEC, generates a continuous current flow. The base-collector voltage, VBC, governs the current gain, or an amplification factor of the transistor.
The ZXTN07012EFFTA has a minimum collector current of 5mA and a maximum collector current of 5A. It has a minimum voltage gain of 50 and a maximum voltage gain of 500. This bipolar transistor has a maximum power dissipation of 750mW and a maximum operating junction temperature of 150℃.
The working principle of the ZXTN07012EFFTA is based on a current gain phenomenon; it passes current from the emitter to the collector. When the base-emitter voltage, VBE, is above 0.7V there is a forward bias created and current starts to flow across the base-emitter junction. This generated current will then create a magnetic field which will in turn attract the electrons in the emitter and draw them towards the collector (electron collectors). Since the electrons are attracted through the emitter-base P-N junction, more electrons will flow out of the emitter into the collector which will in turn cause an increase in collector current. Thus, this is how the ZXTN07012EFFTA functions, using the current gain phenomenon to control the current.
The ZXTN07012EFFTA is applicable in many electrical and electronics applications, such as buck converters, voltage regulators, motor control and driver circuits, audio amplifiers, and switching circuits. It is incredibly popular in electronic design due to its small size, reliability, and cost. The ZXTN07012EFFTA is ideal for applications where space is limited, power dissipation capabilities are desired, and reliable operation is necessary.
The specific data is subject to PDF, and the above content is for reference
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