ZXTN5551FLTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXTN5551FLTR-ND |
Manufacturer Part#: |
ZXTN5551FLTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 160V 0.6A SOT23-3 |
More Detail: | Bipolar (BJT) Transistor NPN 160V 600mA 130MHz 330... |
DataSheet: | ZXTN5551FLTA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 160V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Power - Max: | 330mW |
Frequency - Transition: | 130MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | ZXTN5551 |
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The ZXTN5551FLTA, or Bipolar NPN Transistor, is a general-purpose single european collector transistor with a high power rating and low power dissipation, providing a great option for a variety of applications. It has a wide range of operating temperatures (−55°C to 150°C) and high collector-emitter voltage rating of 45V, making it suitable for use under a variety of conditions. This transistor also offers high breakdown voltage and high emitter-collector current gain, making it an ideal choice for various applications including switching, amplification, and other logic and signal applications.
The ZXTN5551FLTA is a single junction transistor, which is a type of three-layer semiconductor device consisting of emitter, base and collector. It is designed with three distinct layers of semiconductor material: the emitter, collector and base layers. The emitter layer produces electrons, the collector collects them and the base layer controls their flow between the emitter and collector layers. This control of electron flow allows the transistor to amplify and switch electrical signals.
The working principle of the ZXTN5551FLTA is based on the input signal applied to the base-emitter junction. When the base-emitter voltage is brought above the minimum threshold voltage, the transistor is said to turn-on and electrons begin to flow from the emitter to collector, a process known as saturation. The increase in the current flow causes a proportionate increase in voltage across the emitter and collector terminals. This gain in current observed at the collector further amplifies the signal, making the ZXTN5551FLTA an ideal choice for signal amplification.
The versatility of the ZXTN5551FLTA lies in its ability to be used in various diverse applications. In switching applications, it can be used to control the power supplied to electrical components and to prevent them from becoming overloaded. In electronic circuits, it can be used as an amplifier to increase the power of the signal and improve the signal-to-noise ratio. In audio applications, it can be used to amplify audio signals. It can also be used in radio frequency (RF) applications such as cellular phones, FM radios, and satellite receivers. Additionally, it can be used as part of voltage regulation circuits.
The ZXTN5551FLTA also features high collector-emitter breakdown voltage ratings and low power dissipation, making it a preferred choice for a variety of applications. Its wide operating temperature range and high current gain make it a suitable choice for use in a number of electronics applications. With its versatility and reliability, the ZXTN5551FLTA is an ideal choice for both commercial and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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