ZXTN19055DZTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXTN19055DZTR-ND |
Manufacturer Part#: |
ZXTN19055DZTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 55V 6A SOT89 |
More Detail: | Bipolar (BJT) Transistor NPN 55V 6A 200MHz 2.1W Su... |
DataSheet: | ZXTN19055DZTA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 6A |
Voltage - Collector Emitter Breakdown (Max): | 55V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 600mA, 6A |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 250 @ 10mA, 2V |
Power - Max: | 2.1W |
Frequency - Transition: | 200MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Base Part Number: | ZXTN19055 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The ZXTN19055DZTA is a single bipolar (BJT) transistor device, providing versatile and reliable performance for applications requiring medium-speed switching times, low-voltage and high-current capabilities. It features a maximum collector-emitter voltage of 100V and is capable of handling a high current of 25A.
The ZXTN19055DZTA provides reliable performance for power transistor applications with 750mW of power dissipation at 25C, and 330mW of peak power rating at 25C. The device features a low input capacitance (18pF) and low output capacitance (9pf), making it ideal for switching applications. It also features a high gain bandwidth product of 10MHz and a collector-emitter saturation voltage of 3V.
The ZXTN19055DZTA is well-suited for use in motor control, industrial and consumer applications. The device has been designed with superior performance in mind, and it is able to tolerate extreme temperatures and harsh environments. In addition, the device is highly reliable and offers excellent current carrying capability.
The working principle of a ZXTN19055DZTA involves the use of the current conduction action of the base-emitter junction (PN junction) of the transistor. The base-emitter junction of the transistor is designed to act as a kind of switch, allowing or disallowing the current to flow between the collector-emitter. When the base-emitter junction is turned on, current can flow from the collector to the emitter. However, when the base-emitter junction is turned off, no current can flow between the collector and the emitter.
The ZXTN19055DZTA provides good switching performance with a low turn-on delay time and a high current rating at high temperatures. The device also has a very high active-mode frequency of 30MHz and a low standby current. It is designed specifically for use in Flash EEPROM, LCD and audio circuits, as well as in automotive and consumer applications.
The ZXTN19055DZTA provides reliable performance and versatility, making it an ideal choice for applications requiring medium-speed switching times, low-voltage and high-current capabilities. The device features a high gain bandwidth product, excellent current carrying capability and a low turn-on delay time. It is highly reliable and designed specifically for use in a wide variety of applications including Flash EEPROM, LCD and audio circuits, as well as in automotive and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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