ZXTN2010ASTZ Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	4.5A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	210mV @ 200mA, 5A
Current - Collector Cutoff (Max):	500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 2A, 1V
Power - Max:	1W
Frequency - Transition:	130MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92
Base Part Number:	ZXTN2010A

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The ZXTN2010ASTZ is a single bipolar transistor (BJT) component. It is manufactured by Zetex as an NPN type device. The ZXTN2010ASTZ is designed to operate in a wide range of applications including microwave and audio frequency applications. The component has a wide temperature range and can be used in environments where temperatures can reach up to 150°C. It has a high voltage rating and is capable of handling large currents up to a maximum of 8A. The transistor has a high frequency response, which allows it to be used in high frequency applications such as microwave circuits. The component is also highly reliable and cost effective making it an ideal choice for a wide range of applications.

Application Field

The ZXTN2010ASTZ component is designed to be used in a wide range of applications such as microwave and audio frequency devices. It can also be used in high power switching applications such as in DC to DC converters or for driving high current loads such as motor controllers. The component is also an ideal choice for RF power amplifiers due to its high frequency response and high voltage capabilities. Other applications where it can be used include communications equipment, control circuits and power management systems.

Working Principle

The ZXTN2010ASTZ component is a single bipolar transistor. It operates based on the principle of the homogeneous base base junction. This junction is created by bonding three semiconductor layers to form a single crystal. When a current is passed through the central layer, or base layer, the electrical field within that layer changes. This causes the electrons to be pulled away from the base and towards the emitter, forming a voltage drop across the emitter base junction. This allows current to flow from the emitter to the base and collector electrodes. This current flow is the main way that a transistor amplifier works. The ZXTN2010ASTZ component can be operated in both the active and saturation regions. In the active region, the collector voltage is both positively and negatively charged. This allows the current flow to be controlled accurately, allowing the device to be used in power control applications. In the saturation region, the current flow is not controlled, resulting in higher power output from the device.

Conclusion

The ZXTN2010ASTZ component is a single bipolar transistor ideal for a wide range of applications including RF power amplifiers, power control, audio frequency circuits and microwave circuits, as well as DC to DC converters. The component is highly reliable and cost effective making it an ideal choice for a wide range of applications. It operates based on the principle of the homogeneous base base junction and can be used in both the active and saturation regions. The device can handle large currents up to 8A and has a wide temperature range making it suitable for a variety of environments.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description