ZXTN2010A Discrete Semiconductor Products |
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Allicdata Part #: | ZXTN2010A-ND |
Manufacturer Part#: |
ZXTN2010A |
Price: | $ 0.73 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 60V 4.5A TO92-3 |
More Detail: | Bipolar (BJT) Transistor NPN 60V 4.5A 130MHz 1W Th... |
DataSheet: | ZXTN2010A Datasheet/PDF |
Quantity: | 9625 |
1 +: | $ 0.66150 |
10 +: | $ 0.58905 |
100 +: | $ 0.45902 |
500 +: | $ 0.37921 |
1000 +: | $ 0.29938 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 4.5A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 210mV @ 200mA, 5A |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 2A, 1V |
Power - Max: | 1W |
Frequency - Transition: | 130MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92 |
Base Part Number: | ZXTN2010A |
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Manufactured by VISHAY, ZXTN2010A is a single-mode N-channel enhancement mode MOSFET transistor, which is widely used in power management and load switching applications. The device is mainly composed of N- and P-regions, as well as MOSFET gates, to enable efficient power management and switching functions.
When ZXTN2010A is off, the output is completely cut off from the input signal, thereby controlling the power supply of the device. However, when it is turned on, the voltage is applied to the MOSFET gates, the P-regions are pulled to ground, and the N-regions are pulled to the supply voltage, creating a MOSFET, which can be used to control current from the drain to the source.
This MOSFET is also capable of carrying out switched-mode power supply, as it is able to rapidly switch between high and low levels without producing a large voltage drop. This enables it to be used in power supplies, where power is transferred rapidly between two components, without having to use a large amount of energy. As overloads are prevented, this device can be used in applications that require power regulation or load switching.
This transistor has a maximum drain-source voltage of 200V and a drain current of 1.0A. It also features a low standby current of 10uA and a threshold voltage of 0.3V. The maximum power dissipation of the device is 3.2W, which is more than enough for small to medium sized applications. Additionally, it is able to operate at temperatures ranging form -55°C to +150°C.
In terms of package style, the device is available in SOT-223-3, which contains a leadframe and thermal pad, making it suitable for high power and high-freqeuency applications. The leadframe design helps with thermal management, as it dissipates heat away from the MOSFET gate, thus preventing overheating when operating at elevated levels.
Overall, ZXTN2010A is an excellent choice for applications that require power management, load switching, and switched mode power supplies. Its high current, low standby current and wide operating temperature range make it an ideal device for a wide range of industrial, medical and automotive applications. Its unique design also ensures that it is able to handle high power applications, with minimal heat dissipation.
The specific data is subject to PDF, and the above content is for reference
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