ZXTN19020DGTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXTN19020DGTR-ND |
Manufacturer Part#: |
ZXTN19020DGTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 20V 9A SOT223 |
More Detail: | Bipolar (BJT) Transistor NPN 20V 9A 160MHz 3W Surf... |
DataSheet: | ZXTN19020DGTA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 9A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 450mA, 9A |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 100mA, 2V |
Power - Max: | 3W |
Frequency - Transition: | 160MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | ZXTN19020D |
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The ZXTN19020DGTA is a single bipolar junction transistor (BJT) that is used in a wide range of applications. The device is produced by Zetex, a semiconductor manufacturer based in the United Kingdom, and has a wide range of features that make it suitable for many different applications. In this article, we will look at the applications and the working principle of the ZXTN19020DGTA.
Applications of ZXTN19020DGTA
The ZXTN19020DGTA is a NPN transistor, which means it can be used in a variety of applications. These include amplifying signals, switching, amplification of small power signals, and as an interface between logic and transducer circuitry. As it is an NPN transistor, it could also be used for applications that require high-speed switching, such as modulators and demodulators.
The ZXTN19020DGTA can also be used in applications that require high-frequency operation. It has an operating frequency range of 950 kHz to 3 GHz, making it suitable for RF and microwave circuits. The device is also capable of withstanding relatively large voltage fluctuations, making it useful in applications that require reliable operation in noisy environments.
The device is well suited to applications in which power dissipation is an important factor. It has a relatively low power dissipation of 3.2 watts, meaning it can be used in applications where a low power consumption is desired. In addition, the ZXTN19020DGTA has a high breakdown voltage of 200 volts, meaning it can be used in applications where the device must be able to withstand high voltages.
Working Principle of ZXTN19020DGTA
The ZXTN19020DGTA is a bipolar junction transistor, which means it consists of three terminals: the collector, the base, and the emitter. The device is designed with a p-type base region and an n-type emitter and collector regions, which enable it to function as a current amplifier. Essentially, when a voltage is applied to the base terminal, a small amount of current flows from the emitter to the collector. This current is amplified, and the amplified current can be used for a variety of purposes.
The ZXTN19020DGTA also has a temperature range of -55°C to 175°C, which means it can be used in applications where the device must be able to operate in a wide range of temperatures. This makes it suitable for use in a variety of industrial applications where the ambient temperature may fluctuate drastically.
The ZXTN19020DGTA is a reliable device, meaning it can be used in applications where the device must operate reliably. The device has a high beta value, meaning it can be used in applications where current gain is desired. It also has a relatively low maximum collector-emitter saturation voltage of 0.6V, meaning it can be used in applications where the device must be able to pass small voltage signals.
Conclusion
The ZXTN19020DGTA is a single bipolar junction transistor designed for use in a wide range of applications. It has a wide range of features that make it suitable for amplifying signals, switching, amplification of small power signals, and as an interface between logic and transducer circuitry. The device has a high beta value, a low power dissipation, and a wide operating frequency range, making it suitable for use in a variety of applications. In addition, the device is able to withstand relatively large voltage fluctuations and has a relatively low maximum collector-emitter saturation voltage, making it a reliable device for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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