Allicdata Part #: | ZXTN25060BZQTA-ND |
Manufacturer Part#: |
ZXTN25060BZQTA |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 60V 5A SOT89 |
More Detail: | Bipolar (BJT) Transistor NPN 60V 5A 185MHz 1.1W Su... |
DataSheet: | ZXTN25060BZQTA Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.21067 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 305mV @ 500mA, 5A |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 2V |
Power - Max: | 1.1W |
Frequency - Transition: | 185MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89 |
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The ZXTN25060BZQTA, a NPN high-voltage transistor, is designed and manufactured by ZETEX. It is a member of the single bipolar (BJT) transistors, widely applied in high-voltage industrial equipment, medical apparatus etc. This transistor has wide variety of features, and can work in different kinds of environment with conditions like an operating temperature range of -65°C to 150°C.
The ZXTN25060BZQTA has a dip package style which is convenient to use, making it suitable for high-frequency and high-current applications. This transistor is capable of withstanding high-voltage and can endure high-temperature and humidity environment owing to its special package construction.
The ZXTN25060BZQTA has lower noise performance and low distortion, while the gain of this transistor can reach as high as 400V/mV in most cases. The primary purpose of this transistor is to amplify signals and act as a buffer to ensure the stable application performance of high-voltage power-consuming electronics.
This transistor works on a basic principle, where the semiconductor material (silicon) used in a transistor is a natural insulator, but when a small voltage is applied across the base and emitter, current flows through the base-emitter junction. This is due to the presence of semiconductor doping, which changes the properties of the material.
The ZXTN25060BZQTA\'s transistors are composed of three regions, namely the base, collector and emitter. When voltage is applied to the base and collector, current flows through the base-emitter junction and is attracted to the collector. As the current increases, a large electron movement is created between the base and emitter, causing the transistor to amplify, that is, the output current is greater than the input current.
In order to reduce the distortion of power consumption, the ZXTN25060BZQTA transistor offers excellent gain, linearity and noise performance. The most typical application of this transistor is as a power amplifier in high-voltage industrial equipment, medical equipment, computers and communications systems.
To sum up, the ZXTN25060BZQTA is a high-voltage, NPN transistor designed by ZETEX. It offers excellent gain, linearity and noise performance, and is mostly used as a power amplifier in high-voltage electronics. It works on the basic principle of transferring current through the base-emitter junction produced by semiconductor doping, and can be applied in high-frequency and high-current applications.
The specific data is subject to PDF, and the above content is for reference
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