1.2v logical drive - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
EM6K33T2R-ND	EM6K33T2R	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 200mA Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Power - Max: 150mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	1000 Order	--
VT6J1T2CRTR-ND	VT6J1T2CR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 100mA Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100A Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V Power - Max: 120mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: VMT6	1000 Order	8000+: $0.0496
VT6M1T2CRTR-ND	VT6M1T2CR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N and P-Channel FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 100mA Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100A Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V Power - Max: 120mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: VMT6	8000 Order	8000+: $0.0404
SSM6L35FU(TE85L F)TR-ND	SSM6L35FU(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N and P-Channel FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 180mA, 100mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Power - Max: 200mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	1+: $0
UM6K33NTNTR-ND	UM6K33NTN	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 200mA Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Power - Max: 120mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	1000 Order	3000+: $0.0459
SSM6N35AFELFTR- ND	SSM6N35AFE,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100A Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V Power - Max: 250mW Operating Temperature: 150C Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	1000 Order	4000+: $0.0507
VT6K1T2CRTR-ND	VT6K1T2CR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 100mA Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100A Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V Power - Max: 120mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: VMT6	1000 Order	8000+: $0.0406
EFC3J018NUZTDG- ND	EFC3J018NUZTDG	ON Semiconductor	View more Part Status: Active FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 23A (Ta) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V Power - Max: 2.5W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Supplier Device Package: 6-WLCSP (1.77x3.05)	1000 Order	5000+: $0.265
BSL205NH6327XTS A1-ND	BSL205NH6327XTS A1	Infineon Technologies	View more Series: Automotive, AEC-Q101, OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.5A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 11A Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V Power - Max: 500mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	1000 Order	3000+: $0.1404
296-40010-2-ND	CSD85301Q2	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 5A Rds On (Max) @ Id, Vgs: 27 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 469pF @ 10V Power - Max: 2.3W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WSON (2x2)	1000 Order	--
BSL215CH6327XTS A1TR-ND	BSL215CH6327XTS A1	Infineon Technologies	View more Series: Automotive, AEC-Q101, OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 1.5A Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 3.7A Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V Power - Max: 500mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	1000 Order	3000+: $0.1474
BSL207NH6327XTS A1-ND	BSL207NH6327XTS A1	Infineon Technologies	View more Series: Automotive, AEC-Q101, OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.1A Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.1A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 11A Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V Power - Max: 500mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP-6-1	1000 Order	3000+: $0.1404
BSL214NH6327XTS A1-ND	BSL214NH6327XTS A1	Infineon Technologies	View more Series: Automotive, AEC-Q101, OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 1.5A Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 3.7A Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V Power - Max: 500mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	1000 Order	3000+: $0.1263
296-37794-2-ND	CSD87333Q3DT	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 15A Rds On (Max) @ Id, Vgs: 14.3 mOhm @ 4A, 8V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 662pF @ 15V Power - Max: 6W Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-VSON (3.3x3.3) Base Part Number: CSD87333	2250 Order	250+: $0.6028 500+: $0.5327 1250+: $0.4205
296-37535-2-ND	CSD87333Q3D	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 15A Rds On (Max) @ Id, Vgs: 14.3 mOhm @ 4A, 8V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 662pF @ 15V Power - Max: 6W Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-VSON (3.3x3.3) Base Part Number: CSD87333	1000 Order	--
296-38668-2-ND	CSD85301Q2T	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 5A Rds On (Max) @ Id, Vgs: 27 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 469pF @ 10V Power - Max: 2.3W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WSON (2x2)	1000 Order	250+: $0.2724 500+: $0.2318 750+: $0.2029 1250+: $0.1855
CSD87334Q3D-ND	CSD87334Q3D	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 20A Rds On (Max) @ Id, Vgs: 6 mOhm @ 12A, 8V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V Power - Max: 6W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-VSON (3.3x3.3)	1000 Order	--
CTLDM7120-M832D SBK-ND	CTLDM7120-M832D S BK	Central Semiconductor Corp	View more Part Status: Last Time Buy FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 1A (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 10V Power - Max: 1.65W Operating Temperature: -65C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-TDFN Exposed Pad Supplier Device Package: TLM832DS	1000 Order	1+: $0
IRF5850-ND	IRF5850	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.2A Rds On (Max) @ Id, Vgs: 135 mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V Power - Max: 960mW Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	1000 Order	1+: $0
IRF7755-ND	IRF7755	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3.9A Rds On (Max) @ Id, Vgs: 51 mOhm @ 3.7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 15V Power - Max: 1W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	1000 Order	1+: $0
DMP56D0UV-7DITR -ND	DMP56D0UV-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 160mA Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 4V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.58nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 50.54pF @ 25V Power - Max: 400mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	1000 Order	--
NTQD6968N-ND	NTQD6968N	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 6.2A Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 16V Power - Max: 1.39W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	1000 Order	1+: $0
DMN5L06V-7-ND	DMN5L06V-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 280mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 200mA, 2.7V Vgs(th) (Max) @ Id: 1.2V @ 250A Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 150mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	1000 Order	--
IRF5810-ND	IRF5810	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.9A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V Power - Max: 960mW Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	1000 Order	1+: $0
DMN5L06VA-7-ND	DMN5L06VA-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 280mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 200mA, 2.7V Vgs(th) (Max) @ Id: 1.2V @ 250A Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 150mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	1000 Order	--
TPCF8304(TE85LF M-ND	TPCF8304(TE85L, F,M	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 3.2A Rds On (Max) @ Id, Vgs: 72 mOhm @ 1.6A, 10V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Power - Max: 330mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: VS-8 (2.9x1.5)	1000 Order	1+: $0
IRF6156-ND	IRF6156	Infineon Technologies	View more Packaging: Bulk Part Status: Discontinued at Digi-Key FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 6.5A Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V Power - Max: 2.5W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-FlipFet Supplier Device Package: 6-FlipFet	1000 Order	1+: $0
IRF7331-ND	IRF7331	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 7A Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V Power - Max: 2W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	1000 Order	1+: $0
TPCF8201(TE85LF MTR-ND	TPCF8201(TE85L, F,M	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3A Rds On (Max) @ Id, Vgs: 49 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 200A Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V Power - Max: 330mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: VS-8 (2.9x1.5)	1000 Order	1+: $0
SSM6P49NULFTR-N D	SSM6P49NU,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4A Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Power - Max: 1W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-UDFN (2x2)	1000 Order	3000+: $0.1067
NVMD6P02R2G-ND	NVMD6P02R2G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4.8A Rds On (Max) @ Id, Vgs: 33 mOhm @ 6.2A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 16V Power - Max: 750mW Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	1000 Order	2500+: $0.4179
EM6K31GT2RTR-ND	EM6K31GT2R	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 250mA Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Power - Max: 120mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	1000 Order	8000+: $0.0561
QS8J11TCRTR-ND	QS8J11TCR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 3.5A Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 6V Power - Max: 550mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	1000 Order	3000+: $0.1392
EFC6602R-A-TR-N D	EFC6602R-A-TR	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V Power - Max: 2W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFBGA, FCBGA Supplier Device Package: EFCP2718-6CE-020	1000 Order	--
FW217A-TL-2WOST R-ND	FW217A-TL-2W	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25C: 6A Rds On (Max) @ Id, Vgs: 39 mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V Power - Max: 2.2W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	1000 Order	2500+: $0.2206
ECH8601M-TL-H-P -ND	ECH8601M-TL-H-P	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25C: 8A (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	1000 Order	--
ECH8697R-TL-WOS TR-ND	ECH8697R-TL-W	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25C: 10A Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Power - Max: 1.5W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: SOT-28FL/ECH8	6000 Order	--
SSM6N56FELMTR-N D	SSM6N56FE,LM	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 800mA Rds On (Max) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V Power - Max: 150mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	1000 Order	4000+: $0.0609
EFC4627R-TR-ND	EFC4627R-TR	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 4.5V Power - Max: 1.4W Operating Temperature: 150C (TJ) Package / Case: 4-XFBGA, FCBGA Supplier Device Package: 4-EFCP (1.01x1.01)	1000 Order	8000+: $0.0674
EFC6605R-TROSTR -ND	EFC6605R-TR	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 4.5V Power - Max: 1.6W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFBGA Supplier Device Package: 6-EFCP (1.9x1.46)	5000 Order	--

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