Allicdata Part #: | IRF7755-ND |
Manufacturer Part#: |
IRF7755 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2P-CH 20V 3.9A 8-TSSOP |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 3.9A 1W Surfac... |
DataSheet: | IRF7755 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 3.9A |
Rds On (Max) @ Id, Vgs: | 51 mOhm @ 3.7A, 4.5V |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1090pF @ 15V |
Power - Max: | 1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
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IRF7755 is an array of N-channel Field Effect Transistors (FETs) designed with the latest high-efficiency power MOSFET technology. It is widely used in many industrial applications and automotive industry due to its superior performance. In this article, we will discuss the application field and working principle of the IRF7755.
Application Field of IRF7755
The IRF7755 is widely used for switching and power supply applications. It can be used for DC-DC converters, high current power switching and high power inverters. It is also widely adopted in solar systems, automotive applications and other high voltage applications. Moreover, it is suitable for linear amplifier, high speed switching and low to medium frequency switching applications. With its low on-state resistance, the IRF7755 enables highly efficient power conversion.
Working Principle of IRF7755
The IRF7755 is a N-channel MOSFET which consists of eight N-channel FETs connected in a half-bridge configuration. The IRF7755 has an internal integrated circuit which helps to switch each channel on and off quickly. Each channel has a positive voltage applied to its input in order to turn it on, while the negative voltage applied to its output turns it off. The channels are connected in a half-bridge configuration which helps to minimize the switching losses in the device.
The IRF7755 operates in a linear mode when the voltage is applied to its gate. This mode allows the device to draw current from the gate and transfer it to the drain. When the voltage is removed from the gate, the device shifts back to the linear mode and passes the current stored in the gate to the drain. The device will stay in this mode as long as the gate voltage is constant.
The IRF7755 also supports pulse width modulation (PWM) for precise current control. By varying the PWM duty cycle, the current passing through the device can be controlled. This enables the device to operate in the most efficient manner.
In addition, the IRF7755 provides over-voltage protection. This protection feature ensures that the device is not damaged if the voltage applied to its gate is greater than its rated voltage. This helps to increase the longevity of the device by preventing over-voltage damage.
Conclusion
The IRF7755 is a high-efficiency power MOSFET array which is widely used in many industrial and automotive applications. It is suitable for DC-DC converters, high current power switching and high power inverters. It operates in both linear and pulse width modulation modes which enable precise current control. The IRF7755 also provides over-voltage protection which helps to increase the longevity of the device.
The specific data is subject to PDF, and the above content is for reference
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