SSM6L35FU(TE85L,F)

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N and P-Channel
FET Feature:	Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	180mA, 100mA
Rds On (Max) @ Id, Vgs:	3 Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id:	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	--
Input Capacitance (Ciss) (Max) @ Vds:	9.5pF @ 3V
Power - Max:	200mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	US6

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The SSM6L35FU(TE85L,F) is a type of transistor array which, when two transistors are connected in a certain arrangement and combination, allows them to be used in a wide range of applications. This type of device is typically used when two signals need to be combined or separated for certain purposes, such as for high-frequency signals, audio, RF circuits, and so on. This article provides an overview of the SSM6L35FU(TE85L,F) application field and working principle.The SSM6L35FU(TE85L,F) belongs to a type of transistor array called a field effect transistor array. This type of transistor array is a combination of two field-effect transistors (FETs) in which the gate and drain pins are connected in series. The SSM6L35FU(TE85L,F) includes two transistors, one MOSFET and one JFET, in one package. The package of this type of device is often referred to by its SOIC-8 code.The SSM6L35FU(TE85L,F) is primarily used in applications where two high-frequency signals need to be combined or separated. This type of device is commonly used in RF circuits, audio systems, too low noise amplifiers, and other high-frequency applications. The main advantage of using this type of device is that it provides a compact and reliable way to combine two signals, which is beneficial for applications that require a high level of precision and accuracy.The working principle of the SSM6L35FU(TE85L,F) is based on the fact that both FETs have gates that are connected in series. This allows both devices to be used in applications where two high-frequency signals need to be combined or separated. In these cases, the signals can be combined by connecting both FETs together in a certain arrangement and combination.The SSM6L35FU(TE85L,F) has some unique characteristics that make it ideal for high frequency applications. The first characteristic is that it is able to operate with relatively low power consumption, which makes it suitable for use in battery-powered devices. It also has fast switching times, which makes it ideal for use in high-speed applications. Finally, it offers high linearity and excellent input and output impedance characteristics, which makes it suitable for use in audio and RF applications.In conclusion, the SSM6L35FU(TE85L,F) is a type of field effect transistor array that is commonly used in applications where two high-frequency signals need to be combined or separated. It is capable of handling relatively low power consumption, has fast switching times, and can offer high linearity and excellent input and output impedance characteristics. This makes it an ideal choice for audio, RF, and other high-frequency applications.

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