Allicdata Part #: | CSD87334Q3D-ND |
Manufacturer Part#: |
CSD87334Q3D |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET 2N-CH 30V 20A 8SON |
More Detail: | Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 2... |
DataSheet: | CSD87334Q3D Datasheet/PDF |
Quantity: | 1000 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Asymmetrical |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 20A |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 12A, 8V |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.3nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1260pF @ 15V |
Power - Max: | 6W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-VSON (3.3x3.3) |
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The CSD87334Q3D is a type of field effect transistor (FET) array that offers an ultra-low power and illumination control feature. These devices are typically used in automotive lighting applications where the need for fast switching and high current capacitance is needed. This FET array is part of a larger family of transistors that includes Security FETs, Logic FETs, and Cross-Series FETs.
The CSD87334Q3D is a dual-gate, high performance drain-gate N or P MOSFET array. It is available in an 8-pin SOIC package, with a power operating range of 0–75 volts. The low gate-to-source capacitance ensures high switching speed, with the device allowing for low power consumption. The device is also equipped with numerous protection features, enabling it to be used in extreme and harsh environments. These include reverse bias protection, thermal shut-off, current limiting, overvoltage protection, and short-circuit protection.
The working principle of the CSD87334Q3D can be explained as follows. The device consists of two N or P MOSFETs that are connected in parallel, which act as two separate switches. When a voltage is applied to one side of the FET, the other side\'s conductance is controlled by the gate voltage. This allows the device to be used as an illumination and switcher. The gate voltage also governs the current flow through the FET, allowing the device to be used in power management applications such as power switching and protecting sensitive circuits.
The CSD87334Q3D FET array is widely used in automotive lighting applications such as lamp dimming and headlight control, as well as in lighting control systems. It can also be used in industrial and medical applications such as temperature and pressure sensing. Furthermore, it is commonly used in audio applications such as line level audio signals and audio amplifiers.
In conclusion, the CSD87334Q3D is an ultra-low power and illumination control FET array that is widely used in a variety of applications. The dual-gate high performance drain-gate N or P MOSFET array is equipped with numerous protection features, and its low capacitance ensures high switching speed. It is suitable for use in automotive, industrial, medical and audio applications.
The specific data is subject to PDF, and the above content is for reference
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