SSM6N56FE,LM

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SSM6N56FE,LM is a transistor array consisting of three N-channel MOSFETs manufactured by Siliconix. The device is designed for use in power management circuits, as well as high-speed, high-efficiency switching and linear applications. The SSM6N56FE,LM is primarily used in high power and large current applications, such as DC-DC converters and motor control circuits.

The SSM6N56FE,LM is comprised of three N-channel MOSFETs in an 8-pin DMOS package. It offers a maximum drain-source voltage (VDS) of 500V and a maximum drain current (ID) of 11A. The device also features a low on-resistance of 12mΩ (max.) and a Kelvin sensing circuit that allows for precise voltage sensing. All three MOSFETs are protected by integrated ESD and EMI protection circuits.

The SSM6N56FE,LM operates by allowing current to flow between the drain and source terminals when the gate-source voltage (VGS) is greater than a certain value (Vth). This threshold voltage (Vth) is determined by the gate-source capacitance (CGS). When the gate-source voltage (VGS) is below the threshold voltage (Vth), current does not flow between the drain and source terminals. This is because the gate-source capacitance (CGS) is insufficient to attract any substantial amount of electrons, thus current is not able to flow.

The SSM6N56FE,LM can be used in a variety of applications, such as motor control circuits, DC-DC converters, power management circuits, and switching and linear applications. Due to its high power capabilities, the device is especially well-suited for high-power, high-speed, and large current applications. Additionally, the device features ESD and EMI protection circuits to ensure reliable operation even under adverse conditions.

In summary, the SSM6N56FE,LM is a transistor array consisting of three N-channel MOSFETs. It is commonly used in high power and large current applications such as motor control circuits and DC-DC converters. The device offers a maximum drain-source voltage (VDS) of 500V and a maximum drain current (ID) of 11A. Additionally, it features low on-resistance, Kelvin sensing circuits, and integrated ESD and EMI protection circuits. This makes the SSM6N56FE,LM an ideal choice for power management circuits, as well as high-speed, high-efficiency switching and linear applications.

The specific data is subject to PDF, and the above content is for reference