CSD87333Q3D Allicdata Electronics
Allicdata Part #:

296-37535-2-ND

Manufacturer Part#:

CSD87333Q3D

Price: $ 0.37
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: MOSFET 2N-CH 30V 15A 8SON
More Detail: Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 1...
DataSheet: CSD87333Q3D datasheetCSD87333Q3D Datasheet/PDF
Quantity: 1000
1 +: $ 0.37000
10 +: $ 0.35890
100 +: $ 0.35150
1000 +: $ 0.34410
10000 +: $ 0.33300
Stock 1000Can Ship Immediately
$ 0.37
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Base Part Number: CSD87333
Supplier Device Package: 8-VSON (3.3x3.3)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Power - Max: 6W
Input Capacitance (Ciss) (Max) @ Vds: 662pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
Series: NexFET™
Rds On (Max) @ Id, Vgs: 14.3 mOhm @ 4A, 8V
Current - Continuous Drain (Id) @ 25°C: 15A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate, 5V Drive
FET Type: 2 N-Channel (Dual) Asymmetrical
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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CSD87333Q3D Application Field and Working Principle

The CSD87333Q3D is a type of Field-Effect Transistor (FET) array which is used predominantly in high-voltage, high-current applications. This particular transistor array is designed specifically to step down high voltages and currents, making it ideal for use in industrial applications such as robotics, medical imaging, and energy conversion.

What is a FET Array?

A FET array is a type of integrated circuit which contains multiple transistors connected together. These transistors act as switches, enabling the user to control the current flow between two points. FET arrays are often used in applications where a large current is required, and can be used in combination with other integrated circuits such as logic gates for more complex circuit design.

Design and Structure of the CSD87333Q3D

The CSD87333Q3D is a FET array which uses specialized Silicon-Carbide (SiC) materials to provide an increased level of electrical isolation and reduce power leakage from its junction field-effect transistors (JFETs) while maximizing thermal resistance. This transistor array also features on-board protection against short-circuits, allowing it to withstand higher voltages and currents.

The CSD87333Q3D is available in both standard and “power-saving” versions, making it well-suited for both low-power and high-power applications. The power-saving version features an on-board power supply circuit which reduces the drain-source resistance to an incredibly low value, allowing the device to operate at much lower power levels.

Working Principle

The FET array works by controlling the flow of current between two points. This is achieved by using two different types of transistors: the junction field-effect transistor (JFET) and the metal-oxide-semiconductor field-effect transistor (MOSFET). The first type (the JFET) works by using a gate voltage to control the resistance of the channel, which in turn causes the current to increase or decrease. The second type (the MOSFET) works similarly, however instead of using a gate voltage, a control voltage is used to change the current flow.

The CSD87333Q3D is capable of controlling currents up to 92 Amps, doing so while also providing an effective forward voltage of 12 V, an on-resistance of 0.033 Ohms and 80% efficiency. It can also be used to step-down voltages of up to 36 V.

Applications

Because of its high-voltage, high-current capabilities, the CSD87333Q3D is well-suited for use in a variety of applications. Some of these applications include:

  • Robotic applications – where precise electrical control is required
  • Medical imaging – where the precise control of electrical currents is essential
  • Energy conversion – where high current and voltage need to be stepped down

The CSD87333Q3D also has numerous industrial applications, such as in semiconductor fabrication, electrical power control, and vacuum tube systems.

Conclusion

The CSD87333Q3D is a high-voltage, high-current FET array which makes it ideal for use in a wide range of applications. Its on-board protection circuit and SiC materials allow it to withstand high voltages and currents, while its on-board power supply circuit allows for low-power operation. The CSD87333Q3D is a versatile and reliable device for controlling high voltages and currents.

The specific data is subject to PDF, and the above content is for reference

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