ECH8697R-TL-W Allicdata Electronics

ECH8697R-TL-W Discrete Semiconductor Products

Allicdata Part #:

ECH8697R-TL-WOSTR-ND

Manufacturer Part#:

ECH8697R-TL-W

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 24V 10A SOT-28
More Detail: Mosfet Array 2 N-Channel (Dual) Common Drain 24V 1...
DataSheet: ECH8697R-TL-W datasheetECH8697R-TL-W Datasheet/PDF
Quantity: 6000
Stock 6000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: --
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: SOT-28FL/ECH8
Description

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The ECH8697R-TL-W is a type of transistor array that is widely used across many applications due to its superior features. Transistor arrays are composed of multiple individual transistors that are combined together to form a larger and more powerful version of a single transistor. This type of transistor array is also known as an integrated circuit.

The ECH8697R-TL-W is part of a larger family of transistor arrays that are made using the same manufacturing process and intended for use in the same range of applications. It is manufactured by the electronics company ECH and is classified as a Field-Effect Transistor (FET) or Metal Oxide Semiconductor FET (MOSFET). This MOSFET transistor array has a package size of 7 × 7.4 mm and the number of transistors within the array is 8. It has an operating voltage range of 4 to 16 volts, with a maximum voltage of 28 volts.

The ECH8697R-TL-W is used over a wide range of applications, with its highest performance found in automotive and industrial applications. Some of the features of this transistor array that make it popular for these uses include its low on-resistance, low gate charge, high gate-to-source voltage, and high isolation voltage. The operating temperature range of this transistor array can reach up to 175°C, and the maximum steady-state power is up to 20 Watts.

The ECH8697R-TL-W works using the same general principle as any other transistor array. It has four pins, two of which act as a gate and two of which act as a source and drain. As current passes between the source and drain pins, it is modulated by the gate pin, providing better control of the current flow. Depending on the type of gate bias used, the current can be increased or reduced. This type of transistor array is most effective in applications where precise control of the current flow is required, such as most automotive and industrial applications.

Overall, the ECH8697R-TL-W is an extremely versatile transistor array that is suitable for a wide variety of applications. It is a powerful, yet cost-effective choice for automotive and industrial applications, providing precise control of the current flow. The high performance and low on-resistance make it a very desirable transistor array for many uses.

The specific data is subject to PDF, and the above content is for reference

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