Allicdata Part #: | IRF7331-ND |
Manufacturer Part#: |
IRF7331 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 20V 7A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 7A 2W Surface ... |
DataSheet: | IRF7331 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 7A |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 7A, 4.5V |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1340pF @ 16V |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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The IRF7331 is an advanced and versatile power MOSFET array device developed by IRF (International Rectifier), and it falls into the category of transistors, FETs, and MOSFETs - Arrays. Utilizing advanced silicon micro-packaging technology, this device contains four N-channel power MOSFETs. It is designed to economically integrate a low-on-resistance power MOSFET onto the same die with an optimized number of control elements, allowing users to achieve better performance in terms of efficiency, speed, and reliability.
The IRF7331 has some important applications in a wide range of systems. The most common application of the IRF7331 is in power supplies and efficient DC-DC converters. The package of the device also allows it to be thermally efficient and suitable for high power dissipation. This makes the IRF7331 a good choice for applications such as general purpose switching, audio amplification, and motor control.
The working principle of the IRF7331 involves three basic elements, namely the source, drain, and gate. The source is the beginning of the power flow, and the drain is the end. The gate is the element that is used to control the flow of the current through the device. It can be used to turn the device on and off, as well as regulate the amount of current that is being delivered. All of this is achieved by controlling the gate voltage, which controls the flow of current through the device.
The IRF7331 offers excellent performance when it comes to controlling power flow. It has a low gate-source threshold voltage (VGS-th) meaning that it can be easily turned off or on even at low input voltage. The high current handling capacity of the device combined with its low on-resistance (RDS(on)) makes it ideal for use in power conversion applications. This means that the device can effectively deliver power in a range of different conditions and can help to increase the efficiency of circuits.
In addition, the IRF7331 has an extremely fast switching speed, making it suitable for use in high-frequency applications such as switching power supplies and DC-DC converters. It also has a substantially low power dissipation, making it one of the most energy-efficient solutions available on the market.
Overall, the IRF7331 power MOSFET array device is a reliable and cost-effective solution for a wide range of power systems. It is an excellent choice for power conversion applications where efficiency and speed matter, due to its low RDS(on) and fast switching speed. Furthermore, its high current handling capacity and low power dissipation make it one of the best solutions for energy-efficient systems.
The specific data is subject to PDF, and the above content is for reference
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