220uf 25v 8,0x8,0x10,5 125c 4000 - Allicdata Electronics

Related Categories

< 1 2 3 4 5 >

Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
FDPC8011SFSTR-N D	FDPC8011S	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 13A, 27A Rds On (Max) @ Id, Vgs: 6 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 13V Power - Max: 800mW, 900mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Powerclip-33 Base Part Number: FDPC8011S	9000 Order	--
AON6918-ND	AON6918	Alpha & Omega Semiconductor Inc.	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 15A, 26.5A Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 15V Power - Max: 2W, 2.2W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-DFN-EP (5x6)	1000 Order	1+: $0
FDPC8016STR-ND	FDPC8016S	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 20A, 35A Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2375pF @ 13V Power - Max: 2.1W, 2.3W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power Clip 56	136 Order	--
BSG0813NDIATMA1 -ND	BSG0813NDIATMA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 19A, 33A Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 12V Power - Max: 2.5W Operating Temperature: -55C ~ 155C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PG-TISON-8	1000 Order	5000+: $0.6714
FDG8842CZTR-ND	FDG8842CZ	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V, 25V Current - Continuous Drain (Id) @ 25C: 750mA, 410mA Rds On (Max) @ Id, Vgs: 400 mOhm @ 750mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 1.44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V Power - Max: 300mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	1000 Order	--
BSG0810NDIATMA1 -ND	BSG0810NDIATMA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 19A, 39A Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12V Power - Max: 2.5W Operating Temperature: -55C ~ 155C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PG-TISON-8	1000 Order	5000+: $0.7384
SIZ320DT-T1-GE3 TR-ND	SIZ320DT-T1-GE3	Vishay Siliconix	View more Series: PowerPAIR, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 30A (Tc), 40A (Tc) Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 8A, 10V, 4.24 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V, 11.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 12.5V, 1370pF @ 12.5V Power - Max: 16.7W, 31W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	3000 Order	3000+: $0.2511
AON6922-ND	AON6922	Alpha & Omega Semiconductor Inc.	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 18A, 31A Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 1.7V @ 250A Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 12.5V Power - Max: 2W, 2.2W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-DFN-EP (5x6)	1000 Order	--
FDPC8012STR-ND	FDPC8012S	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 13A, 26A Rds On (Max) @ Id, Vgs: 7 mOhm @ 12A, 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V Power - Max: 800mW, 900mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Powerclip-33	3000 Order	--
BSC0911NDATMA1T R-ND	BSC0911NDATMA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 18A, 30A Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 12V Power - Max: 1W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PG-TISON-8	1000 Order	5000+: $0.5298
FDMS3600SFSTR-N D	FDMS3600S	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 15A, 30A Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250A Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 13V Power - Max: 1W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56 Base Part Number: FDMS3600S	9000 Order	--
SIZ926DT-T1-GE3 TR-ND	SIZ926DT-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Gen IV Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 40A (Tc), 60A (Tc) Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 5A, 10V, 2.2 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V Power - Max: 20.2W, 40W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair (6x5)	6000 Order	3000+: $0.3793
IRFH4253DTRPBFT R-ND	IRFH4253DTRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 64A, 145A Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.1V @ 35A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V Power - Max: 31W, 50W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PQFN (5x6)	1000 Order	--
FDG6303N_G-ND	FDG6303N_G	ON Semiconductor	View more Packaging: Bulk Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 500mA Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 300mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	1000 Order	1+: $0
SIZ328DT-T1-GE3 TR-ND	SIZ328DT-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Gen IV Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 5A, 10V, 10 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, 11.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V, 600pF @ 10V Power - Max: 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	1000 Order	3000+: $0.2521
FDG6321C-F169-N D	FDG6321C-F169	ON Semiconductor	View more Part Status: Last Time Buy FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 500mA (Ta), 410mA (Ta) Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V, 1.1 Ohm @ 410mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V, 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 62pF @ 10V Power - Max: 300mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	1000 Order	1+: $0
FDG6304P-F169-N D	FDG6304P-F169	ON Semiconductor	View more Part Status: Last Time Buy FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 410mA (Ta) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 410mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V Power - Max: 300mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	1000 Order	1+: $0
296-49071-2-ND	CSD86356Q5DT	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 40A (Ta) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 5V, 0.8 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 1.85V @ 250A, 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 19.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1.04nF @ 12.5V, 2.51nF @ 12.5V Power - Max: 12W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-VSON-CLIP (5x6)	500 Order	250+: $1.3693 500+: $1.1982 750+: $1.0818 1250+: $0.9927
LN100LA-G-ND	LN100LA-G	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Cascoded) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Rds On (Max) @ Id, Vgs: 3000 Ohm @ 2mA, 2.8V Vgs(th) (Max) @ Id: 1.6V @ 10A Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 350mW Operating Temperature: -25C ~ 125C (TJ) Mounting Type: Surface Mount Package / Case: 6-VFLGA Supplier Device Package: 6-LFGA (3x3)	1000 Order	1+: $0
LP1030DK1-G-ND	LP1030DK1-G	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 300V Rds On (Max) @ Id, Vgs: 180 Ohm @ 20mA, 7V Vgs(th) (Max) @ Id: 2.4V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 10.8pF @ 25V Operating Temperature: -25C ~ 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SOT-23-5	1000 Order	1+: $0
SQJ990EP-T1_GE3 TR-ND	SQJ990EP-T1_GE3	Vishay Siliconix	View more Series: Automotive, AEC-Q101, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 34A (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 6A, 10V, 19 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V, 650pF @ 25V Power - Max: 48W Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK SO-8 Dual Supplier Device Package: PowerPAK SO-8 Dual Asymmetric	1000 Order	3000+: $0.3408
SQJ570EP-T1_GE3 TR-ND	SQJ570EP-T1_GE3	Vishay Siliconix	View more Series: Automotive, AEC-Q101, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 15A (Tc), 9.5A (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V, 146 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 600pF @ 25V Power - Max: 27W Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK SO-8 Dual Supplier Device Package: PowerPAK SO-8 Dual	1000 Order	3000+: $0.2921
SQJ260EP-T1_GE3 TR-ND	SQJ260EP-T1_GE3	Vishay Siliconix	View more Series: Automotive, AEC-Q101, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 20A (Tc), 54A (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 6A, 10V, 8.5 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V, 2500pF @ 25V Power - Max: 27W (Tc), 48W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK SO-8 Dual Supplier Device Package: PowerPAK SO-8 Dual Asymmetric	1000 Order	3000+: $0.3591
SQJ262EP-T1_GE3 TR-ND	SQJ262EP-T1_GE3	Vishay Siliconix	View more Series: Automotive, AEC-Q101, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 15A (Tc), 40A (Tc) Rds On (Max) @ Id, Vgs: 35.5 mOhm @ 2A, 10V, 15.5 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V, 1260pF @ 25V Power - Max: 27W (Tc), 48W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK SO-8 Dual Supplier Device Package: PowerPAK SO-8 Dual Asymmetric	1000 Order	3000+: $0.3286
SQJ504EP-T1_GE3 TR-ND	SQJ504EP-T1_GE3	Vishay Siliconix	View more Series: Automotive, AEC-Q101, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 8A, 10V, 17 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V, 4600pF @ 25V Power - Max: 34W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerPAK SO-8 Dual	1000 Order	3000+: $0.3895
FMP76-01T-ND	FMP76-01T	IXYS	View more Part Status: Active FET Type: N and P-Channel, Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 54A (Tc), 62A (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 38A, 10V, 11 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 250A, 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V, 104nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V, 5080pF @ 25V Power - Max: 89W, 132W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUSi5-Pak Supplier Device Package: ISOPLUS i4-PAC	1000 Order	25+: $9.2081
SQJ244EP-T1_GE3 TR-ND	SQJ244EP-T1_GE3	Vishay Siliconix	View more Series: Automotive, AEC-Q101, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 20A (Tc), 60A (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 4A, 10V, 4.5 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V, 2800pF @ 25V Power - Max: 27W (Tc), 48W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK SO-8 Dual Supplier Device Package: PowerPAK SO-8 Dual Asymmetric	1000 Order	3000+: $0.3591
TC6321T-V/9UTR- ND	TC6321T-V/9U	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 2A (Ta) Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V, 8 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA, 2.4V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V, 200pF @ 25V Operating Temperature: -55C ~ 175C Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-VDFN (6x5)	1000 Order	3300+: $0.7008
DMC62D0SVQ-7DIT R-ND	DMC62D0SVQ-7	Diodes Incorporated	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 60V, 50V Current - Continuous Drain (Id) @ 25C: 571mA (Ta), 304mA (Ta) Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 500mA, 10V, 6 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V, 0.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 26pF @ 25V Power - Max: 510mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	1000 Order	--
APTC60DDAM24T3G -ND	APTC60DDAM24T3G	Microsemi Corporation	View more Series: CoolMOS Packaging: Tray Part Status: Active FET Type: 2 N Channel (Dual Buck Chopper) FET Feature: Super Junction Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 95A Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Power - Max: 462W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	1000 Order	100+: $41.6713
HCT802TX-ND	HCT802TX	TT Electronics/Optek Technology	View more Packaging: Bulk Part Status: Obsolete FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25C: 2A, 1.1A Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V Power - Max: 500mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: 6-SMD	1000 Order	1+: $0
APTM100DUM90G-N D	APTM100DUM90G	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25C: 78A Rds On (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V Power - Max: 1250W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	1000 Order	1+: $0
SSM6N7002BFU(T5 LFCT-ND	SSM6N7002BFU(T5 L,F	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 200mA Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.1V @ 250A Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Power - Max: 300mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6 Base Part Number: SSM6N7002	1000 Order	1+: $0
APTC80DDA15T3G- ND	APTC80DDA15T3G	Microsemi Corporation	View more Packaging: Bulk Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 28A Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V Power - Max: 277W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	1000 Order	100+: $23.6541
IRFI4019H-117P- ND	IRFI4019H-117P	Infineon Technologies	View more Packaging: Tube Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 8.7A Rds On (Max) @ Id, Vgs: 95 mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 4.9V @ 50A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V Power - Max: 18W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Full Pack Supplier Device Package: TO-220-5 Full-Pak	122 Order	--
FMM150-0075X2F- ND	FMM150-0075X2F	IXYS	View more Series: HiPerFET, TrenchT2 Packaging: Tube Part Status: Active FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 120A Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V Power - Max: 170W Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUSi5-Pak Supplier Device Package: ISOPLUS i4-PAC	1000 Order	25+: $10.5484
APTM20AM04FG-ND	APTM20AM04FG	Microsemi Corporation	View more Packaging: Bulk Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 372A Rds On (Max) @ Id, Vgs: 5 mOhm @ 186A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V Power - Max: 1250W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	50 Order	1+: $138.058 10+: $131.396 25+: $126.635
TC8020K6-G-M937 -ND	TC8020K6-G-M937	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 6 N and 6 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 200V Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 56-VFQFN Exposed Pad Supplier Device Package: 56-QFN (8x8)	1000 Order	3000+: $4.079
APTM20DUM04G-ND	APTM20DUM04G	Microsemi Corporation	View more Packaging: Bulk Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 372A Rds On (Max) @ Id, Vgs: 5 mOhm @ 186A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V Power - Max: 1250W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	1000 Order	100+: $112.167
APTC60DDAM70T3G -ND	APTC60DDAM70T3G	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 39A Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 250W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	1000 Order	1+: $0

< 1 2 3 4 5 >

Hot Searches: 220uf 25v 8,0x8,0x10,5 125c 4000 220uf 25v 8,0x8,0x10,5 105c 1000 33uf 63v 8,0x8,0x10,5 125c 4000h 22uf 80v 8,0x8,0x10,5 125c 4000h 68uf 50v 8,0x8,0x10,5 125c 4000h 100uf 25v 6,3x6,3x7,7 125c 4000h 22uf 25v 6,3x6,3x5,8 125c 2000h 120uf 25v 8,0x8,0x11,7 125c 2000 cap alum smd 125c 220uf 10vdc cap alum smd 125c 220uf 35vdc cap alum 220uf 25v axial 4000 logic buffer 4000 logic divider 4000 logic counter 4000 logic flip-flops 4000 logic inverter 4000 multi-function inverter 4000 configurable inverter 4000 shift register 4000 professional logic

Search Result:220uf 25v 8,0x8,0x10,5 125c 4000

Related Categories